Inkjet-Printed, Deep Subthreshold Operated Pseudo-CMOS Inverters with High Voltage Gain and Low Power Consumption,Advanced Electronic Materials

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Inkjet-Printed, Deep Subthreshold Operated Pseudo-CMOS Inverters with High Voltage Gain and Low Power Consumption
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2022-08-11 , DOI: 10.1002/aelm.202200528
Jyoti Ranjan Pradhan ₁ , Manvendra Singh ₁ , Subho Dasgupta ₁

Affiliation

Oxide electronics has received increasing research and industrial attention in recent years. Solution-processed/printed thin film transistors (TFTs) have rapidly matured to challenge its organic counterparts. However, when the n-type oxides can demonstrate high mobility band transport, the performance of the p-type ones is still weak. Consequently, examples of all-oxide circuits are rare in the literature. Here printed amorphous indium-gallium-zinc oxide (a-IGZO) based all-oxide pseudo-CMOS inverters, ring oscillators, and static random access memories (SRAMs), where the doping density and the device aspect ratio-controlled deep-subthreshold region offers sharp switching of the input signal is shown. For example, the signal gain (η) of pseudo-CMOS 2T and 4T inverters is recorded as 285 and 329, respectively. Furthermore, the deep subthreshold operation ensures low dynamic power consumption, only few tens of nanowatts up to 1.5 V supply voltage. The inverters have demonstrated rail-to-rail swing up to 30 kHz and the 3-stage ring oscillators recorded oscillation frequency of 6.7 kHz. The SRAM devices have shown satisfactory noise margins at HOLD-, READ-, and WRITE-states, while their transient response is also recorded. These fully-printed all-oxide TFTs and circuits can be of large interest in portable/wearable electronics, display backplanes, interfacing circuits for sensors, etc.

中文翻译：

具有高电压增益和低功耗的喷墨打印、深亚阈值操作伪 CMOS 逆变器

近年来，氧化物电子学受到越来越多的研究和工业关注。溶液处理/印刷薄膜晶体管 (TFT) 已迅速成熟以挑战其有机对应物。然而，当n型氧化物可以表现出高迁移率带传输时，p 型氧化物的性能仍然很弱。因此，全氧化物电路的例子在文献中很少见。这里印刷了非晶铟镓锌氧化物（a-IGZO) 基于全氧化物伪 CMOS 反相器、环形振荡器和静态随机存取存储器 (SRAM)，其中显示了掺杂密度和器件纵横比控制的深亚阈值区域提供了输入信号的急剧切换。例如，伪 CMOS 2T 和 4T 反相器的信号增益 (η) 分别记录为 285 和 329。此外，深亚阈值操作确保了低动态功耗，高达 1.5 V 的电源电压仅为几十纳瓦。逆变器的轨到轨摆幅高达 30 kHz，3 级环形振荡器记录的振荡频率为 6.7 kHz。SRAM 器件在 HOLD、READ 和 WRITE 状态下均显示出令人满意的噪声容限，同时还记录了它们的瞬态响应。

更新日期：2022-08-11

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