How superconductivity emerges in the vicinity of an antiferromagnetic insulating state is a long-standing issue of strong correlation physics. We study the transition from an antiferromagnetic insulator to a superconductor by hole doping based on a bilayer generalization of a Hubbard model. The projector quantum Monte Carlo simulations are employed, which are sign problem free both at and away from half filling. An anisotropic Ising antiferromagnetic Mott insulating phase occurs at half filling, which is weakened by hole doping. Below a critical doping value, antiferromagnetism coexists with the singlet superconductivity, which is a pairing across each rung with an extended $s$-wave symmetry. As doping further increases, the antiferromagnetic order vanishes, leaving only a superconducting phase. These results provide important information on how superconductivity appears upon doping the parent Mott-insulating state.

中文翻译：

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掺杂驱动的反铁磁绝缘体-超导体跃迁：量子蒙特卡罗研究

超导性如何在反铁磁绝缘状态附近出现是强关联物理学长期存在的问题。我们基于 Hubbard 模型的双层推广，通过空穴掺杂研究了从反铁磁绝缘体到超导体的转变。使用投影仪量子蒙特卡罗模拟，在半填充和远离半填充时都没有符号问题。各向异性 Ising 反铁磁 Mott 绝缘相出现在半填充处，该绝缘相被空穴掺杂削弱。在临界掺杂值以下，反铁磁性与单线态超导共存，单线态超导是在每个梯级上与扩展的配对$s$-波对称。随着掺杂的进一步增加，反铁磁顺序消失，只留下超导相。这些结果提供了有关在掺杂母体莫特绝缘状态时超导性如何出现的重要信息。