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A Deep Study of Resistance Switching Phenomena in TaOx ReRAM Cells: System-Theoretic Dynamic Route Map Analysis and Experimental Verification
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2022-08-11 , DOI: 10.1002/aelm.202200182 Alon Ascoli 1 , Stephan Menzel 2 , Vikas Rana 3 , Tim Kempen 3 , Ioannis Messaris 1 , Ahmet Samil Demirkol 1 , Michael Schulten 4 , Anne Siemon 4 , Ronald Tetzlaff 1
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2022-08-11 , DOI: 10.1002/aelm.202200182 Alon Ascoli 1 , Stephan Menzel 2 , Vikas Rana 3 , Tim Kempen 3 , Ioannis Messaris 1 , Ahmet Samil Demirkol 1 , Michael Schulten 4 , Anne Siemon 4 , Ronald Tetzlaff 1
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The multidisciplinary field of memristors calls for the necessity for theoretically-inclined researchers and experimenters to join forces, merging complementary expertise and technical know-how, to develop and implement rigorous and systematic techniques to design variability-aware memristor-based circuits and systems. The availability of a predictive physics-based model for a memristor is a necessary requirement before commencing these investigations. An interesting dynamic phenomenon, occurring ubiquitously in non-volatile memristors, is fading memory. The latter may be defined as the appearance of a unique steady-state behavior, irrespective of the choice of the initial condition from an admissible range of values, for each stimulus from a certain family, for example, the DC or the purely-AC periodic input class. This paper first provides experimental evidence for the emergence of fading memory effects in the response of a TaOx redox-based random access memory cell to inputs from both of these classes. Leveraging the predictive capability of a physics-based device model, called JART VCM v1, a thorough system-theoretic analysis, revolving around the Dynamic Route Map graphic tool, is presented. This analysis allows to gain a better understanding of the mechanisms, underlying the emergence of history erase effects, and to identify the main factors, that modulate this nonlinear phenomenon, toward future potential applications.
中文翻译：
TaOx ReRAM 单元中电阻切换现象的深入研究：系统理论动态路由图分析和实验验证
忆阻器的多学科领域要求有理论倾向的研究人员和实验者联合起来，融合互补的专业知识和技术诀窍，开发和实施严格和系统的技术来设计基于忆阻器的可变感知电路和系统。在开始这些研究之前，忆阻器基于物理的预测模型的可用性是必要的要求。在非易失性忆阻器中普遍存在的一个有趣的动态现象是内存衰减。后者可以定义为独特的稳态行为的出现，无论初始条件是从可接受的值范围内选择的，对于来自某个族的每个刺激，例如直流或纯交流周期性输入类。x基于氧化还原的随机存取存储器单元，用于来自这两个类的输入。利用基于物理的设备模型（称为 JART VCM v1）的预测能力，提出了一种围绕动态路线图图形工具进行的全面系统理论分析。这种分析可以更好地理解历史擦除效应出现的机制，并确定调节这种非线性现象的主要因素，以适应未来的潜在应用。
更新日期：2022-08-11
中文翻译：
TaOx ReRAM 单元中电阻切换现象的深入研究：系统理论动态路由图分析和实验验证
忆阻器的多学科领域要求有理论倾向的研究人员和实验者联合起来，融合互补的专业知识和技术诀窍，开发和实施严格和系统的技术来设计基于忆阻器的可变感知电路和系统。在开始这些研究之前，忆阻器基于物理的预测模型的可用性是必要的要求。在非易失性忆阻器中普遍存在的一个有趣的动态现象是内存衰减。后者可以定义为独特的稳态行为的出现，无论初始条件是从可接受的值范围内选择的，对于来自某个族的每个刺激，例如直流或纯交流周期性输入类。x基于氧化还原的随机存取存储器单元，用于来自这两个类的输入。利用基于物理的设备模型（称为 JART VCM v1）的预测能力，提出了一种围绕动态路线图图形工具进行的全面系统理论分析。这种分析可以更好地理解历史擦除效应出现的机制，并确定调节这种非线性现象的主要因素，以适应未来的潜在应用。
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