The possible use of nanostructured silicon carbide for the manufacturing of chemiresistive gas sensors with high selectivity towards sulfur dioxide has been recently explored. In this work, we take this topic a step further with an in-depth investigation on the role played by the oxidation process occurring on the surface of silicon carbide nanoparticles during the detection of SO₂. This study starts by understanding the oxidation process at different temperatures and subsequently investigates the reaction mechanism of SO₂, in both dry and wet atmosphere, at the optimal working temperature for the sensor operation. The device was characterized using a diffuse reflectance infrared Fourier transform spectroscopy setup capable of working in operando conditions with a dedicated electronics for the simultaneous monitoring of surface chemical reactions on the sensing film together with its electrical activity. This work demonstrates that the oxidation of silicon carbide nanoparticles is at the core of the modification of the overall electrical characteristics of the device. It was also proved that the exposure to SO₂ increases the oxidation rate of the silicon carbide film in working conditions. Moreover, it was observed that this behavior is magnified by the presence of humidity.

Finally, a proposed sensing mechanism is suggested highlighting a mainly ionic electrical conduction, in which working conditions play a fundamental role in affecting the concentration and mobility of charge carriers.

最近探索了使用纳米结构碳化硅制造对二氧化硫具有高选择性的化学电阻气体传感器的可能性。在这项工作中，我们进一步深入研究了碳化硅纳米粒子表面发生的氧化过程在检测 SO ₂过程中所起的作用。本研究首先了解不同温度下的氧化过程，然后研究 SO _{2的反应机理。}，在干燥和潮湿的气氛中，在传感器工作的最佳工作温度下。该装置使用漫反射红外傅里叶变换光谱装置进行表征，该装置能够在操作条件下工作，并配有专用电子设备，用于同时监测传感膜上的表面化学反应及其电活动。这项工作表明，碳化硅纳米颗粒的氧化是器件整体电特性修改的核心。还证明暴露于SO ₂增加了碳化硅膜在工作条件下的氧化速率。此外，观察到这种行为会因湿度的存在而放大。

最后，提出了一种传感机制，强调主要是离子导电，其中工作条件在影响电荷载流子的浓度和迁移率方面起着重要作用。