The effects of post-deposition oxygen annealing temperature on the physical, chemical, and optical properties of gallium oxide (Ga₂O₃) films were systematically studied in this work. First, Ga₂O₃ films were deposited on Si (100) substrates by atomic layer deposition (ALD) and then annealed at 500–900 ℃, respectively. Several standard surface analysis methods were used to characterize the Ga₂O₃ films before and after annealing. X-ray diffraction (XRD) patterns illustrated that the as-deposited amorphous film transitioned to β-phase after annealing at temperatures greater than 600 ℃. Atomic force microscopy (AFM) images showed that the grain size and roughness of the films significantly increased when annealed above 700 ℃. Transmission electron microscopy (TEM) tests presented that the interface microstructure was slightly affected by the annealing process. The effects of the annealing process on optical properties were performed using photoluminescence spectroscopy (PL) and spectroscopic ellipsometry (SE). Moreover, X-ray spectroscopy (XPS) was utilized to extract the oxygen vacancy (V_O) concentration, bandgap, and the energy band alignment of Ga₂O₃. With increasing annealing temperature, it was found that the atomic ratio of O/Ga increased while V_O decreased monotonically from 47.4 % to 27.0 %. Density functional theory (DFT) simulation further accounted for energy band shifts resulting from the variation of V_O. This study provides a means to achieve high-quality β-Ga₂O₃ films, highly significant for applications of β-Ga₂O₃-based ultraviolet photodetectors and other relevant devices.

本工作系统地研究了沉积后氧退火温度对氧化镓（Ga ₂ O ₃）薄膜的物理、化学和光学性质的影响。首先，通过原子层沉积（ALD）在Si（100）衬底上沉积Ga ₂ O _{3薄膜，然后分别在500-900 ℃下退火。}几种标准的表面分析方法用于表征 Ga ₂ O ₃退火前后的薄膜。X射线衍射（XRD）图谱表明，在大于600 ℃的温度下退火后，所沉积的非晶薄膜转变为β相。原子力显微镜 (AFM) 图像显示，当 700 ℃ 以上退火时，薄膜的晶粒尺寸和粗糙度显着增加。透射电子显微镜 (TEM) 测试表明界面微观结构受退火过程的轻微影响。使用光致发光光谱 (PL) 和光谱椭偏仪 (SE) 进行退火工艺对光学性能的影响。此外，利用 X 射线光谱 (XPS) 来提取Ga ₂ O _{3的氧空位 (V O} ) 浓度、带隙和能带排列。. 随着退火温度的升高，发现O/Ga的原子比增加，而VO_从47.4%单调下降到27.0%。密度泛函理论 (DFT) 模拟进一步解释了由 V _O变化引起的能带偏移。这项研究提供了一种获得高质量 β-Ga ₂ O ₃薄膜的方法，这对 β-Ga ₂ O ₃的应用具有重要意义基紫外光电探测器和其他相关设备。