This study effectively succeeded in synthesizing CdSe QDs and CdSe- SiO₂ nanocomposites with controllable tunable size and spectacular morphology by using a solvothermal technique. UV–visible spectroscopy was used to study the effect of the growth time of CdSe QDs on the optical properties of its nanocomposite with SiO₂. The structure of the prepared nanocomposites of CdSe- SiO₂ was studied through the measurements of X-ray diffraction (XRD), transmission electron microscopy (TEM), and Fourier transform infrared spectroscopy FTIR. The Effective Mass Approximation model (EMA), Simple Exponential Function (SEF), and Polynomial Fitting Functions (PFF) were employed to compute nanoparticle sizes, providing particle sizes of 3.86, 4.19, and 3.72 nm, respectively, for CdSe- SiO₂ nanocomposites (2 min). For the same nanocomposite, these theoretical values were comparable to the experimental values of the particle sizes deduced from measurements of TEM (4.5 nm) and XRD (3.4 nm). The deduced optical parameters of CdSe-SiO₂ nanocomposite, such as refractive index, dielectric constant, optical conductivity, electrical susceptibility, and some others, relied on the growth time of CdSe QDs. The absorption peaks of CdSe -SiO₂ nanocomposites suffered from a bathochromic shift which increases as the growth time of CdSe QDs increases. Increasing the growth time of CdSe QDs resulted in increasing the reflection loss factor and decreasing the optical electronegativity. The values of the volume energy loss function (VELF) are greater than the values of the surface energy loss function (SELF) for the different nanocomposites. Consequently, the fast electrons miss their energies through their propagation within the studied materials more than through traveling on their surfaces. The enhancement of n values of nanocomposites of CdSe-SiO₂ by increasing the growth time can candidate them to be usefully applied as antireflection coating for solar cells.

本研究利用溶剂热技术成功地合成了尺寸可控、形貌可观的CdSe量子点和CdSe-SiO _{2纳米复合材料。}紫外-可见光谱用于研究CdSe量子点的生长时间对其与SiO ₂的纳米复合材料的光学性质的影响。制备的CdSe-SiO _{2纳米复合材料的结构}通过 X 射线衍射 (XRD)、透射电子显微镜 (TEM) 和傅里叶变换红外光谱 FTIR 的测量来研究。_{采用有效质量近似模型 (EMA)、简单指数函数 (SEF) 和多项式拟合函数 (PFF) 计算纳米颗粒尺寸，CdSe-SiO 2}纳米复合材料的颗粒尺寸分别为 3.86、4.19 和 3.72 nm （2 分钟）。对于相同的纳米复合材料，这些理论值与从 TEM (4.5 nm) 和 XRD (3.4 nm) 的测量推导出的粒径的实验值相当。CdSe-SiO _{2的光学参数推导}纳米复合材料的折射率、介电常数、光导率、电导率等都依赖于 CdSe 量子点的生长时间。CdSe-SiO ₂纳米复合材料的吸收峰发生红移，随着CdSe量子点生长时间的增加而增加。增加 CdSe 量子点的生长时间会导致反射损耗因子增加并降低光电负性。对于不同的纳米复合材料，体积能量损失函数 (VELF) 的值大于表面能量损失函数 (SELF) 的值。因此，快速电子通过它们在研究材料中的传播而不是通过在它们的表面上传播来丢失它们的能量。CdSe-SiO纳米复合材料n值的提高₂通过增加生长时间可以使它们有效地用作太阳能电池的抗反射涂层。