Single-walled carbon nanotube (SWNT)-based devices are expected to play an important role in the next generation of electronic integrated circuits. As an important structural unit for SWNT-based electronics, the Schottky junction has a series of functions such as rectification, photoelectric detection, switching, etc. Here, we demonstrate a well-controlled localized radical reaction method to prepare an intramolecular SWNT Schottky junction with a closed edge. This junction exhibits strong gate-dependent rectifying behavior and a high rectification ratio of 962. Furthermore, the semiconducting part on the junction side could be effectively tuned from p-type doping to n-type doping, resulting in reversible rectifying behavior. Our work paves a new avenue for the design and synthesis of an SWNT Schottky junction, which is very important to future applications for carbon-based nanoelectronic devices.

中文翻译：

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具有可调谐栅极整流的单壁碳纳米管肖特基结的选区制造

基于单壁碳纳米管（SWNT）的器件有望在下一代电子集成电路中发挥重要作用。作为基于 SWNT 的电子器件的重要结构单元，肖特基结具有整流、光电检测、开关等一系列功能。在这里，我们展示了一种可控的局部自由基反应方法来制备分子内 SWNT 肖特基结。一个封闭的边缘。该结表现出很强的栅极相关整流行为和962的高整流比。此外，结侧的半导体部分可以有效地从p型掺杂调整为n型掺杂，从而产生可逆的整流行为。我们的工作为 SWNT 肖特基结的设计和合成开辟了一条新途径，