This article integrates several techniques for large-scale, high power-efficiency, and area-efficiency terahertz (THz) radiators. First, we present a systematic design method to synthesize a high output power harmonic oscillator at a high fundamental to maximum oscillation frequency ( $f_{\mathrm {osc}}/f_{\mathrm {max}})$ ratio by making a quantitative tradeoff between fundamental oscillation and harmonic output power. Then, a ring scalable coupled oscillator array topology is proposed for a flexible and compact layout. Patch antennas are preferred for large-scale radiator arrays, but the size is much larger than the commonly used slot antenna. Therefore, a miniature on-chip patch antenna is proposed for front-side radiation, whose compact size also helps make the design scalable in 2-D. A quartz superstrate is superimposed on the chip to improve the radiation efficiency. A 16-element ring-coupled oscillator–radiator array is designed and fabricated in a 0.8-mm² total area using a 65-nm CMOS process to verify the design methods. Maximum radiated power of −2.8 dBm is measured at 472 GHz. This design achieves an area efficiency of 0.66 mW/mm², the highest among THz radiator arrays using on-chip patch antennas. It is even higher than most radiator arrays using slot antennas. This design also achieves the state-of-the-art dc-to-THz efficiency and frequency tuning range of 0.12% and 4.2%, respectively. The chip can be easily configured to feed a low-cost Teflon lens. A maximum effective isotropic radiated power (EIRP) of ~30 dBm is measured with a 12-mm diameter lens. The measured directivity is 33.7 dBi. At 472 GHz, the measured phase noise is −71.3 dBc/Hz at the 1-MHz offset.

中文翻译：

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具有微型贴片天线的 0.47-THz 环形可扩展耦合振荡器-散热器阵列

本文集成了用于大规模、高功率效率和面积效率太赫兹 (THz) 辐射器的多种技术。首先，我们提出了一种系统设计方法，用于在高基波到最大振荡频率下合成高输出功率谐波振荡器（ $f_{\mathrm {osc}}/f_{\mathrm {max}})$通过在基波振荡和谐波输出功率之间进行定量权衡来实现比率。然后，提出了一种环形可扩展耦合振荡器阵列拓扑结构，以实现灵活紧凑的布局。贴片天线是大型辐射阵列的首选，但尺寸比常用的缝隙天线大得多。因此，提出了一种用于正面辐射的微型片上贴片天线，其紧凑的尺寸也有助于使设计在二维方面具有可扩展性。芯片上叠加石英基板以提高辐射效率。一个 16 元素的环形耦合振荡器 - 辐射器阵列被设计和制造在 0.8-mm ²总面积采用65-nm CMOS工艺来验证设计方法。-2.8 dBm 的最大辐射功率是在 472 GHz 时测得的。^{该设计实现了 0.66 mW/mm 2}的面积效率，这是使用片上贴片天线的太赫兹辐射器阵列中最高的。它甚至高于大多数使用缝隙天线的辐射器阵列。该设计还实现了最先进的直流到太赫兹效率和频率调谐范围，分别为 0.12% 和 4.2%。该芯片可以很容易地配置为供应低成本的 Teflon 透镜。使用直径为 12 毫米的透镜测量的最大有效全向辐射功率 (EIRP) 约为 30 dBm。测得的方向性为 33.7 dBi。在 472 GHz 时，在 1 MHz 偏移处测得的相位噪声为 -71.3 dBc/Hz。