Abstract

A modified surface was obtained on wide-gap II-VI compounds. The methods of thermal annealing for cadmium chalcogenides and chemical etching for the first time obtained heterolayers of atypical hexagonal modification of α-ZnSe have been improved. AFM topograms of surface nanostructures have been investigated and comprehensive studies of optical and luminescent properties have been carried out. The emission spectra were determined in the photon energy range 1.4–3.6 eV and the important role of recombination processes in the formation of the A band in the edge region was established. The dominant role of quantum-dimensional processes in the formation of the obtained B band of intense radiation in a wide spectral region of the visible and ultraviolet ranges has been established.

摘要

在宽禁带 II-VI 化合物上获得了改性表面。对硫族化镉热退火和化学刻蚀首次获得α-ZnSe非典型六方变质异质层的方法进行了改进。研究了表面纳米结构的 AFM 拓扑图，并对光学和发光特性进行了综合研究。发射光谱在 1.4–3.6 eV 的光子能量范围内确定，并确定了重组过程在边缘区域 A 带形成中的重要作用。已经确定了在可见光和紫外范围的宽光谱区域中形成所获得的强辐射 B 带的量子维过程的主导作用。