Electrically-Driven Photonic Crystal Lasers with Ultra-low Threshold,Laser & Photonics Reviews

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Electrically-Driven Photonic Crystal Lasers with Ultra-low Threshold
Laser & Photonics Reviews ( IF 9.8 ) Pub Date : 2022-08-07 , DOI: 10.1002/lpor.202200109
Evangelos Dimopoulos _{1,

2} , Aurimas Sakanas ₁ , Andrey Marchevsky ₁ , Meng Xiong _{1,

2} , Yi Yu _{1,

2} , Elizaveta Semenova _{1,

2} , Jesper Mørk _{1,

2} , Kresten Yvind _{1,

2}

Affiliation

Light sources with ultra-low energy consumption and high performance are required to realize optical interconnects for on-chip communication. Photonic crystal (PhC) nanocavity lasers are one of the most promising candidates for this role. In this work, a continuous-wave PhC nanolaser with an ultra-low threshold current of 10.2 µA emitting at 1540 nm and operated at room temperature is demonstrated. The lasers are InP-based bonded on silicon (Si), and comprise a buried heterostructure active region and lateral p–i–n junction, feature CMOS-compatible drive voltage, and exhibit low self-heating. Carrier leakage is a fundamental limitation of the lateral pumping scheme that is identified as unwanted spontaneous emission from the InP p–i interface, limiting the injection efficiency to 3% which further decreases at higher current. The effect of fabrication disorder and p-doping absorption on the Q-factor is studied experimentally showing that p-doping limits the Q-factor to 8000, with a p-doping absorption coefficient of 120 cm⁻¹.

中文翻译：

具有超低阈值的电驱动光子晶体激光器

实现片上通信的光互连需要超低能耗和高性能的光源。光子晶体 (PhC) 纳米腔激光器是这一角色最有希望的候选者之一。在这项工作中，展示了一种连续波 PhC 纳米激光器，它具有 10.2 µA 的超低阈值电流，在 1540 nm 发射并在室温下运行。这些激光器基于 InP 键合在硅 (Si) 上，包括埋入式异质结构有源区和横向 p-i-n 结，具有与 CMOS 兼容的驱动电压，并具有低自热性。载流子泄漏是横向泵浦方案的一个基本限制，它被认为是来自 InP p-i 界面的不需要的自发辐射，将注入效率限制在 3%，在更高的电流下进一步降低。通过实验研究Q因子表明 p 掺杂将Q因子限制为 8000，p 掺杂吸收系数为 120 cm ^-1。

更新日期：2022-08-07

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