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Vacuum-Referred Binding Energies of Bismuth and Lanthanide Levels in LiTaO3 Perovskite: Toward Designing Energy Storage Phosphor for Anti-Counterfeiting, X-Ray Imaging, and Mechanoluminescence
Laser & Photonics Reviews ( IF 9.8 ) Pub Date : 2022-08-04 , DOI: 10.1002/lpor.202200304 Tianshuai Lyu 1 , Pieter Dorenbos 2
Laser & Photonics Reviews ( IF 9.8 ) Pub Date : 2022-08-04 , DOI: 10.1002/lpor.202200304 Tianshuai Lyu 1 , Pieter Dorenbos 2
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Discovering UV-light or X-ray charged afterglow and storage phosphors with high charge carrier storage capacity remains challenging. Herein, a method is proposed by combining vacuum referred binding energy (VRBE) diagram construction and optimization of dopants’ concentration and compound synthesis. The refined chemical shift model, optical spectroscopy, and thermoluminescence will be combined to construct the VRBE diagram of LiTaO3 with the lanthanide and bismuth charge transition levels. Based on the constructed VRBE diagram of LiTaO3, Bi3+, and/or Ln3+ (Ln = Tb or Pr) doped LiTaO3 will be studied. By combining Bi3+ with Tb3+, Pr3+, or Bi3+ itself, Bi3+ emerges to act as a ≈0.62 eV deep electron trap, while Tb3+, Pr3+, or Bi3+ acts as about 1.5 eV deep hole capturing and recombination centres. The VRBE in the Bi2+ 2P1/2 ground state will be derived by thermoluminescence study. Proof-of-concept X-ray imaging, compression force distribution monitoring, and color-tailoring for anti-counterfeiting will be demonstrated by using the developed Bi3+ and/or Ln3+ doped LiTaO3. This work promotes the understanding of trap level locations and on the trapping and release processes of charge carriers in Bi3+ and/or lanthanides doped inorganic compounds for rational design of new afterglow and storage phosphors.
中文翻译：
LiTaO3 钙钛矿中铋和镧系元素水平的真空参考结合能：走向设计用于防伪、X 射线成像和机械发光的储能荧光粉
发现具有高电荷载流子存储容量的紫外光或 X 射线带电余辉和存储磷光体仍然具有挑战性。在此，提出了一种将真空参考结合能（VRBE）图构建与掺杂剂浓度优化和化合物合成相结合的方法。将改进的化学位移模型、光谱学和热致发光相结合，构建具有镧系元素和铋电荷跃迁能级的 LiTaO 3的 VRBE 图。基于构建的LiTaO 3、Bi 3+和/或Ln 3+ (Ln = Tb或Pr)掺杂的LiTaO 3的VRBE图将被研究。通过将Bi 3+与Tb 3+、Pr 3+，或Bi 3+本身，Bi 3+出现以充当≈0.62 eV 深的电子陷阱，而Tb 3+、Pr 3+或Bi 3+充当约1.5 eV 深的空穴捕获和复合中心。Bi 2+ 2 P 1/2基态的VRBE将通过热释光研究推导出来。将通过使用已开发的 Bi 3+和/或 Ln 3+掺杂的 LiTaO 3来演示概念验证 X 射线成像、压缩力分布监测和防伪颜色定制。这项工作促进了对陷阱能级位置以及Bi 3+中电荷载流子的捕获和释放过程的理解和/或镧系元素掺杂的无机化合物，用于合理设计新的余辉和存储荧光粉。
更新日期：2022-08-04
中文翻译：
LiTaO3 钙钛矿中铋和镧系元素水平的真空参考结合能：走向设计用于防伪、X 射线成像和机械发光的储能荧光粉
发现具有高电荷载流子存储容量的紫外光或 X 射线带电余辉和存储磷光体仍然具有挑战性。在此，提出了一种将真空参考结合能（VRBE）图构建与掺杂剂浓度优化和化合物合成相结合的方法。将改进的化学位移模型、光谱学和热致发光相结合，构建具有镧系元素和铋电荷跃迁能级的 LiTaO 3的 VRBE 图。基于构建的LiTaO 3、Bi 3+和/或Ln 3+ (Ln = Tb或Pr)掺杂的LiTaO 3的VRBE图将被研究。通过将Bi 3+与Tb 3+、Pr 3+，或Bi 3+本身，Bi 3+出现以充当≈0.62 eV 深的电子陷阱，而Tb 3+、Pr 3+或Bi 3+充当约1.5 eV 深的空穴捕获和复合中心。Bi 2+ 2 P 1/2基态的VRBE将通过热释光研究推导出来。将通过使用已开发的 Bi 3+和/或 Ln 3+掺杂的 LiTaO 3来演示概念验证 X 射线成像、压缩力分布监测和防伪颜色定制。这项工作促进了对陷阱能级位置以及Bi 3+中电荷载流子的捕获和释放过程的理解和/或镧系元素掺杂的无机化合物，用于合理设计新的余辉和存储荧光粉。
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