We report the universal trend in pulsed-DC and RF operations of GaN-based high electron mobility transistors through reduced peak junction temperature governed by heat diffusion. The saturation drain current (I_DS,SAT) is known to increase with reducing duty cycle D and pulse period P. The improved I_DS,SAT is due to enhanced heat diffusion during OFF-time for smaller D. Contrary to the reported linear trend, this work discovers a power-law dependency between high I_DS,SAT versus D for all measured conditions. The estimated junction temperature also shows a universal power-law trend with I_DS,SAT. The previously reported linear trend, valid over a limited D and/or temperature, is an approximation to the most general trend observed here. The effect of surface/buffer trapping/de-trapping is not significant to mask the universal trend. Fourier's law fundamentally governs the slope in the log–log scale through heat diffusion, which is the root cause of the discovered universal behavior. The universal trend provides further insights into the operations of these transistors. The GaN HEMTs under pulsed-DC and RF operation provide significantly higher gain up to large input power, lower gain compression, and higher power-added efficiency (PAE) following the universal law. Peak power handling capacity increases with decreasing D following the power-law relation. Peak output power, average power output, and PAE show a strict linear trend in the log–log scale with D, establishing its fundamental dependency on the junction temperature. Considering the root cause of the fundamental nature, it is likely that the same universal relation persists for all transistors under pulsed operation.

我们报告了基于 GaN 的高电子迁移率晶体管的脉冲 DC 和 RF 操作的普遍趋势，通过降低由热扩散控制的峰值结温。饱和漏极电流 (I _DS,SAT ) 会随着占空比 D 和脉冲周期 P 的减小而增加。改进的 I _DS,SAT是由于 D 较小的关断时间期间热扩散增强。与报告的线性趋势相反，这项工作发现了所有测量条件下高 I _DS,SAT与 D之间的幂律依赖性。估计的结温也显示出 I _{DS,SAT的普遍幂律趋势}. 先前报道的线性趋势在有限的 D 和/或温度范围内有效，是此处观察到的最普遍趋势的近似值。表面/缓冲区陷印/去陷印的效果对于掩盖普遍趋势并不显着。傅立叶定律通过热扩散从根本上控制对数尺度的斜率，这是发现的普遍行为的根本原因。普遍趋势为这些晶体管的操作提供了进一步的见解。脉冲直流和射频操作下的 GaN HEMT 在大输入功率下提供显着更高的增益、更低的增益压缩以及遵循通用定律的更高功率附加效率 (PAE)。根据幂律关系，峰值功率处理能力随着 D 的减小而增加。峰值输出功率，平均功率输出，和 PAE 在对数尺度上与 D 显示出严格的线性趋势，从而确定其对结温的基本依赖性。考虑到基本性质的根本原因，很可能在脉冲操作下所有晶体管都存在相同的普遍关系。