The graphene (Gr) can effectively confine the dislocation propagation, allowing for the pronounced strengthening effect. However, due to the technical limitations of atomic resolution, an in-depth understanding regarding the potential strengthening mechanisms at atomic level is still insufficiently comprehended. In this paper, molecular dynamics (MD) simulations were performed to investigate dislocation-Gr interactions and strengthening mechanisms in FeNiCrCoCu high-entropy alloy (HEA)/Gr nanopillars. The hindrance of Gr sheet to mobile dislocations was demonstrated to promote the onset of massive immobile dislocations, especially the Stair-rod dislocation which gave rise to the remarkable strengthening effect. The immobile Hirth, 1/3<110> and 1/6<301> dislocations exerted the subsidiary effect on strengthening the composite pillars. Meanwhile, the diminished dislocation length induced by dislocation reactions and the absorption effect to mobile dislocations was verified to endow a more appreciable dislocation starvation for composite pillars which was conducive to forming more Stair-rod dislocations. In addition, the results also confirmed that the reduction in Gr diameters would directly weaken the pillars attributing to the fact that the Gr edges acted as a dislocation source. These findings may contribute to the design of HEA/Gr composites toward better mechanical properties.

石墨烯（Gr）可以有效地限制位错传播，从而实现显着的强化效果。然而，由于原子分辨率的技术限制，对原子级潜在强化机制的深入了解仍然不够充分。在本文中，进行了分子动力学 (MD) 模拟，以研究 FeNiCrCoCu 高熵合金 (HEA)/Gr 纳米柱中的位错-Gr 相互作用和强化机制。Gr片对移动位错的阻碍被证明促进了大规模固定位错的发生，特别是阶梯杆位错，它产生了显着的强化作用。固定的Hirth、1/3<110>和1/6<301>位错对增强复合柱起到了辅助作用。同时，验证了位错反应引起的位错长度减小和对移动位错的吸收作用，赋予复合柱更明显的位错饥饿，有利于形成更多的阶梯形位错。此外，结果还证实了 Gr 直径的减小会直接削弱柱状体，这是由于 Gr 边缘充当位错源的事实。这些发现可能有助于设计 HEA/Gr 复合材料以获得更好的机械性能。结果还证实，由于 Gr 边缘充当位错源这一事实，Gr 直径的减小会直接削弱柱子。这些发现可能有助于设计 HEA/Gr 复合材料以获得更好的机械性能。结果还证实，由于 Gr 边缘充当位错源这一事实，Gr 直径的减小会直接削弱柱子。这些发现可能有助于设计 HEA/Gr 复合材料以获得更好的机械性能。