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One-step constructed dual interfacial layers for stable perovskite solar cells
Materials Today Physics ( IF 10.0 ) Pub Date : 2022-08-05 , DOI: 10.1016/j.mtphys.2022.100796
Fengxian Cao , Huiwen Chen , Shibo Wang , Pengxu Chen , Chenwei Zhu , Zhang Lan , Weihai Sun , Yunlong Li , Jihuai Wu

The highly efficient perovskite solar cells (PSCs) along with excellent long-term stability can be obtained by fabricating two-dimensional (2D) perovskites (PVKs) over the three-dimensional (3D) PVKs film. However, the additional step of forming 2D PVKs before depositing the hole/electron transporting layer would make the device fabrication processes complicated, increasing costs for the manufacture of PSCs. In the present work, 2D PVKs were in-situ formed on surface of the 3D PVKs film by a self-assembly method, together with the deposition of the hole transporting material (HTM) at the same time, which tremendously simplified the fabrication of PSCs based on 3D PVKs/2D PVKs. Based on the one-step constructed 2D PVKs/HTM dual interfacial layers, density of trap states in devices were decreased remarkably owing to efficient interfacial passivation. In the meantime, the hydrophobicity, conductivity and hole extraction ability of the HTM were generally improved, enhancing the operational stability and performance of the solar cells. Thus, the corresponding solar cells increased 10% of average power conversion efficiency, where the highest open circuit voltage is up to 1.174 V. After 672 h of exposure under full 1-sun simulation in ambient conditions, the device still retained more than 82% of its initial PCE which was almost 50% higher than that of the control device.



中文翻译:

用于稳定钙钛矿太阳能电池的一步构建双界面层

通过在三维 (3D) PVK 薄膜上制造二维 (2D) 钙钛矿 (PVK) 可以获得高效的钙钛矿太阳能电池 (PSC) 以及出色的长期稳定性。然而,在沉积空穴/电子传输层之前形成 2D PVK 的附加步骤会使器件制造工艺复杂化,从而增加 PSC 的制造成本。在目前的工作中,通过自组装方法在 3D PVKs 薄膜表面原位形成 2D PVKs,同时沉积空穴传输材料(HTM),极大地简化了 PSCs 的制造。基于 3D PVK/2D PVK。基于一步构建的二维 PVKs/HTM 双界面层,由于有效的界面钝化,器件中的陷阱态密度显着降低。同时,HTM的疏水性、导电性和空穴提取能力普遍提高,提高了太阳能电池的运行稳定性和性能。因此,相应的太阳能电池提高了 10% 的平均功率转换效率,其中最高开路电压高达 1.174 V。在环境条件下,在全 1-sun 模拟下暴露 672 小时后,器件仍保持在 82% 以上其初始 PCE 比对照设备高出近 50%。

更新日期:2022-08-09
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