During the plasma etching process, obtaining a high-quality transfer from the mask pattern onto the substrate under the suppression of the charging effects is of great significance. The charging phenomena on two cases of mask patterns have been studied. Due to mask patterns with complex shapes can be viewed as a combination of several basic shapes, the first case focuses on three types of isolated and basic shaped (triangle, square and hexagon) mask holes. Another case is five typical defect structures of mask pattern (intrusion, jog, protrusion, short and rough edge). A classical particle simulation program was used. This study showed that the electric field (E-field) strength distribution is non-uniform for all shaped holes, which is due to the different radii of curvatures (the strength at the sides is much higher than that at the vertexes). In addition, the uniformity of the E-field distribution gets better gradually as the shape of the mask hole changes from the triangle to the hexagon. This is mainly because the absolute curvature of the vertexes gradually decreases. It is also concluded that, for a basic shaped mask hole, the less the absolute curvature of a site, the higher the E-field strength. The simulation of the profile evolution shows that the triangular and hexagonal holes display the maximum and the minimum deformations, respectively. In the second case, because of the overall effect of the defect structure, some sites present abnormal local E-field distribution, which is contrary to the rule summarized in the first case. The simulated profile evolution which considered the effect of the ion reflection (in term of different values of reflection probability) further proves those speculations based on the E-field distribution. The influence of the reflection probability on the damage to the profile was also discussed. This work cannot conclude a definite rule of the abnormal charging phenomena in these defect structures yet, but it would shed light on a way o maintain the pattern integrity.

在等离子刻蚀过程中，在抑制充电效应的情况下，获得从掩模图案到基板的高质量转移具有重要意义。研究了两种掩模图案的充电现象。由于形状复杂的掩膜图案可以看作是几种基本形状的组合，第一种情况重点介绍三种孤立的基本形状（三角形、正方形和六边形）的掩膜孔。另一种情况是掩模图案的五种典型缺陷结构（侵入、凹凸、突出、短边和粗糙边缘）。使用了经典的粒子模拟程序。本研究表明，电场 ( E- 场）所有形状孔的强度分布不均匀，这是由于曲率半径不同（侧面的强度远高于顶点的强度）。此外，随着掩模孔的形状由三角形变为六边形， E场分布的均匀性逐渐变好。这主要是因为顶点的绝对曲率逐渐减小。还得出结论，对于基本形状的掩模孔，位点的绝对曲率越小，E越高-场强。轮廓演变的模拟表明，三角形和六边形孔分别显示最大和最小变形。在第二种情况下，由于缺陷结构的整体影响，一些位点呈现出异常的局部电场分布，这与第一种情况总结的规律相反。考虑离子反射影响的模拟轮廓演化（根据不同的反射概率值）进一步证明了基于E的那些推测-场分布。还讨论了反射概率对型材损伤的影响。这项工作还不能得出这些缺陷结构中异常充电现象的明确规律，但它会为保持图案完整性的方法提供启示。