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Coulomb Screening and Scattering in Atomically Thin Transistors across Dimensional Crossover
Nano Letters ( IF 9.6 ) Pub Date : 2022-08-03 , DOI: 10.1021/acs.nanolett.2c02023 Shihao Ju 1 , Binxi Liang 1 , Jian Zhou 1 , Danfeng Pan 1 , Yi Shi 1 , Songlin Li 1
Nano Letters ( IF 9.6 ) Pub Date : 2022-08-03 , DOI: 10.1021/acs.nanolett.2c02023 Shihao Ju 1 , Binxi Liang 1 , Jian Zhou 1 , Danfeng Pan 1 , Yi Shi 1 , Songlin Li 1
Affiliation
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Layered two-dimensional dichalcogenides are potential candidates for post-silicon electronics. Here, we report insightfully experimental and theoretical studies on the fundamental Coulomb screening and scattering effects in these correlated systems, in response to the changes of three crucial Coulomb factors, including electric permittivity, interaction distance, and density of Coulomb impurities. We systematically collect and analyze the trends of electron mobility with respect to the above factors, realized by synergic modulations on channel thicknesses and gating modes in dual-gated MoS2 transistors with asymmetric dielectric cleanliness. Strict configurative form factors are developed to capture the subtle parametric changes across dimensional crossover. A full diagram of the carrier scattering mechanisms, in particular on the pronounced Coulomb scattering, is unfolded. Moreover, we clarify the presence of up to 40% discrepancy in mobility by considering the permittivity modification across dimensional crossover. The understanding is useful for exploiting atomically thin body transistors for advanced electronics.
中文翻译：
跨维度交叉的原子薄晶体管中的库仑筛选和散射
层状二维二硫化物是后硅电子产品的潜在候选者。在这里，我们对这些相关系统中的基本库仑屏蔽和散射效应进行了深入的实验和理论研究，以响应三个关键库仑因子的变化，包括电容率、相互作用距离和库仑杂质的密度。我们系统地收集和分析了与上述因素有关的电子迁移率趋势，通过对双门控 MoS 2中沟道厚度和门控模式的协同调制来实现具有不对称介电清洁度的晶体管。开发了严格的配置形式因素以捕获跨维度交叉的细微参数变化。展开了载流子散射机制的完整图，特别是关于明显的库仑散射的图。此外，我们通过考虑跨维度交叉的介电常数修改，阐明了高达 40% 的迁移率差异的存在。这种理解对于将原子级薄体晶体管用于先进电子产品非常有用。
更新日期：2022-08-03
中文翻译：
跨维度交叉的原子薄晶体管中的库仑筛选和散射
层状二维二硫化物是后硅电子产品的潜在候选者。在这里，我们对这些相关系统中的基本库仑屏蔽和散射效应进行了深入的实验和理论研究，以响应三个关键库仑因子的变化，包括电容率、相互作用距离和库仑杂质的密度。我们系统地收集和分析了与上述因素有关的电子迁移率趋势，通过对双门控 MoS 2中沟道厚度和门控模式的协同调制来实现具有不对称介电清洁度的晶体管。开发了严格的配置形式因素以捕获跨维度交叉的细微参数变化。展开了载流子散射机制的完整图，特别是关于明显的库仑散射的图。此外，我们通过考虑跨维度交叉的介电常数修改，阐明了高达 40% 的迁移率差异的存在。这种理解对于将原子级薄体晶体管用于先进电子产品非常有用。
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