Despite the great progress has been made on device parameters and working mechanism of perovskite-based memristors, thermal instability under extreme conditions limits their performance, and thermal effect on their resistive switching (RS) characteristics remains unclear. Herein, from the viewpoint of organic/inorganic interfacial interaction in a novel 2D <100>-oriented perovskite [(TZ-H)₂(PbBr₄)]_n (TZ = 1H-1,2,4-triazole), thermal effect on the RS performance of perovskite-based memristor is investigated. This FTO/[(TZ-H)₂(PbBr₄)]_n/Ag memristor can exhibit high thermal tolerance with a working temperature of 170 °C, and the best RS characteristics can be achieved at 140 °C. Mechanistic studies are executed based on X-ray single structural analysis, powder X-ray diffraction, UV–Vis, and fluorescence. Before the occurrence of phase change below 140 °C (α-phase), anisotropic lattice expansion illustrated by the weaker inter-layer NH···Br hydrogen bond, longer layer–layer distances, more distorted PbBr₆ octrahedra, larger optical gap, and quenched fluorescence can be beneficial for the trap-filled limited process. After phase transformation into β-phase, the breakage of layer–layer interaction and looser layer–layer packing will inhibit the halogen migration, resulting in more space charge limited conduction characters. The unique thermal enhanced RS performance with status monitored by fluorescent chromism can provide a new paradigm for the development of new memristors with highly environmental tolerance.

中文翻译：

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高工作温度下<100>取向钙钛矿[(TZ-H)2(PbBr4)]n的热增强电阻转换性能：三唑鎓/(PbBr4)n2n–界面相互作用洞察

尽管基于钙钛矿的忆阻器的器件参数和工作机制取得了很大进展，但极端条件下的热不稳定性限制了它们的性能，并且热对其阻变（RS）特性的影响仍不清楚。在此，从新型二维<100>取向钙钛矿[(TZ-H) ₂ (PbBr ₄ )] _n (TZ = 1H-1,2,4-三唑)中有机/无机界面相互作用的角度来看，热效应研究了基于钙钛矿的忆阻器的 RS 性能。此 FTO/[(TZ-H) ₂ (PbBr ₄ )] _n/Ag忆阻器可以在170°C的工作温度下表现出很高的耐热性，在140°C时可以达到最佳的RS特性。基于 X 射线单结构分析、粉末 X 射线衍射、UV-Vis 和荧光进行机理研究。在 140 °C 以下（ α相）发生相变之前，层间N H···Br 氢键较弱、层间距离更长、PbBr 6 八面体畸变_更大、光学间隙和猝灭的荧光对充满陷阱的有限过程是有益的。相转变为β后相，层-层相互作用的破坏和更松散的层-层堆积会抑制卤素迁移，导致更多的空间电荷限制传导特性。独特的热增强RS性能和荧光色度监测状态可以为开发具有高环境耐受性的新型忆阻器提供新的范例。