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Power-Efficient and Highly Uniform BiFeO3-Based Memristors Optimized with TiInSnO Electrode Interfacial Effect
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2022-08-02 , DOI: 10.1002/aelm.202200435 Qing Xia 1 , Yuxiang Qin 1, 2, 3 , Peilun Qiu 1
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2022-08-02 , DOI: 10.1002/aelm.202200435 Qing Xia 1 , Yuxiang Qin 1, 2, 3 , Peilun Qiu 1
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Memristor, processing data storage, and logic operation all-in-one, is expected to create a new era of neuromorphic computing and digital logic. Here, this work demonstrates a BiFeO3-based memristor with Ti-doped indium tin oxide as the top electrode material, exhibiting high metrics such as a switching voltage of ≈0.15 V, coefficients of variations of low resistance state of ≈0.46% and a large on/off ratio of ≈103. What is more, the device exhibits a power consumption as low as ≈1.02 µW in set process with a self-compliance current. To elucidate the resistive switching behavior, the role of TiInSnO electrode and the corresponding current conduction mechanism have been thoroughly investigated. In this end, the effect of Ti-doping on the resistance behavior is demonstrated based on the current fitting analysis and first-principles calculations based on density functional theory. It is clarified that the doped Ti ions may trap oxygen ions to concentrate around the interface between resistance switching layer and electrode, resulting in more stable and uniform performance. The findings suggest that, with TiInSnO film as the novel electrode of memristors, the present study can offer a significantly promising route to implement low-power, highly uniform information storage, and neuromorphic computing technology.
中文翻译：
使用 TiInSnO 电极界面效应优化的高能效且高度均匀的 BiFeO3 基忆阻器
忆阻器，处理数据存储，逻辑运算一体化，有望开创神经形态计算和数字逻辑的新纪元。在这里，这项工作展示了一种以 Ti 掺杂的氧化铟锡作为顶部电极材料的 BiFeO 3基忆阻器，表现出高指标，例如 ≈0.15 V 的开关电压、≈0.46% 的低电阻状态变化系数和≈10 3的大开/关比. 更重要的是，该器件在设置过程中的功耗低至≈1.02 µW，具有自调节电流。为了阐明电阻切换行为，对 TiInSnO 电极的作用和相应的电流传导机制进行了深入研究。为此，基于电流拟合分析和基于密度泛函理论的第一性原理计算证明了Ti掺杂对电阻行为的影响。明确了掺杂的 Ti 离子可能会捕获氧离子以集中在电阻转换层和电极之间的界面周围，从而使性能更加稳定和均匀。研究结果表明，以 TiInSnO 薄膜作为忆阻器的新型电极，本研究可以为实现低功耗、
更新日期：2022-08-02
中文翻译：
使用 TiInSnO 电极界面效应优化的高能效且高度均匀的 BiFeO3 基忆阻器
忆阻器，处理数据存储，逻辑运算一体化，有望开创神经形态计算和数字逻辑的新纪元。在这里，这项工作展示了一种以 Ti 掺杂的氧化铟锡作为顶部电极材料的 BiFeO 3基忆阻器，表现出高指标，例如 ≈0.15 V 的开关电压、≈0.46% 的低电阻状态变化系数和≈10 3的大开/关比. 更重要的是，该器件在设置过程中的功耗低至≈1.02 µW，具有自调节电流。为了阐明电阻切换行为，对 TiInSnO 电极的作用和相应的电流传导机制进行了深入研究。为此，基于电流拟合分析和基于密度泛函理论的第一性原理计算证明了Ti掺杂对电阻行为的影响。明确了掺杂的 Ti 离子可能会捕获氧离子以集中在电阻转换层和电极之间的界面周围，从而使性能更加稳定和均匀。研究结果表明，以 TiInSnO 薄膜作为忆阻器的新型电极，本研究可以为实现低功耗、
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