The Liquid Crystal Display (LCD) panels were removed and crushed to be leached. Sulphuric acid of 0.25 M H₂SO₄ was found best for relatively fast reactions and selectivity, recovering >99% of the indium from the indium‑tin oxide (ITO) layers, while >95% of the tin content was left in the solid residue. As potential impurities, Sn, Fe, Mn, Ni, Zn, Bi, Pb, Al and Cu were analysed in the solutions and in the final product. Synthetic solutions of larger volumes corresponding to the obtained leachate were used for developing the purification and metal recovery steps. Metallic indium was extracted selectively from the solution by cementation on Al plates. The purity of the primary indium deposit was controlled by increasing the temperature to 50–60 °C and keeping the pH in the 0.25–0.5 range, while the aluminium consumption was close to the stoichiometric value. The cemented sponge was vacuum-melted to produce an indium anode block of >99.9% purity for electrorefining. According to the galvanostatic and potentiodynamic results, the optimal electrolyte conditions were found as 50 g/dm³ In, 1 M free Cl⁻ ions, pH 1. The cathodic deposition of Zn, Mn, and Fe was negligible; however, the prior removal of Cu and Sn from the solution is required for producing high-purity indium. Generally, increasing the cathodic current density in the range of 150–600 A/m² enhanced the purity of the cathodes, while a maximum pH 2 value should be assured. Chloride ion concentration strongly influences the deposit morphology.

液晶显示器 (LCD) 面板被移除并压碎以进行浸出。0.25 MH ₂ SO _4硫酸发现最适合相对快速的反应和选择性，从氧化铟锡 (ITO) 层中回收 >99% 的铟，而 >95% 的锡含量留在固体残留物中。作为潜在杂质，在溶液和最终产品中分析了 Sn、Fe、Mn、Ni、Zn、Bi、Pb、Al 和 Cu。对应于所获得的渗滤液的较大体积的合成溶液用于开发纯化和金属回收步骤。通过在铝板上的胶结从溶液中选择性地提取金属铟。通过将温度提高到 50-60°C 并将 pH 值保持在 0.25-0.5 范围内来控制初级铟沉积物的纯度，而铝的消耗量接近化学计量值。将胶合海绵真空熔化以产生>99的铟阳极块。9% 纯度用于电解精炼。根据恒电流和动电位结果，发现最佳电解质条件为 50 g/dm³ In，1 M 游离 Cl ^-离子，pH 1。Zn、Mn 和 Fe 的阴极沉积可以忽略不计；然而，为了生产高纯度铟，需要预先从溶液中去除Cu和Sn。通常，在 150-600 A/m ²范围内增加阴极电流密度可提高阴极纯度，同时应确保最大 pH 2 值。氯离子浓度强烈影响沉积物形态。