In this study, a new op-amp model was created by re-designing the internal structure of the traditional operational amplifier (741 family) circuit element with a linear dopant drift TiO₂ memristor (LDDTM) emulator model. The optimized working conditions and states of this proposed op-amp model were determined. Wien bridge oscillator circuit realized with memristive based op-amp model has been investigated on oscillating start time, settling time, fast fourier transform (FFT) analysis and output parameters. In addition, the efficiency of the wien bridge oscillator circuit realized with a memristor-based opamp has been tested with application circuits and the accuracy and applicability of the proposed memristor-based opamp model has been extensively examined theoretically and supported by experimental and simulation results. Finally, both the simulation and experimental results of the oscillator circuits realized with a memristor-based opamp are presented in detail in tables.

在这项研究中，通过重新设计具有线性掺杂漂移 TiO _{2的传统运算放大器（741 系列）电路元件的内部结构，创建了一种新的运算放大器模型。}忆阻器 (LDDTM) 仿真器模型。确定了该提出的运算放大器模型的优化工作条件和状态。以忆阻为基础的运放模型实现的维恩桥振荡器电路对振荡开始时间、稳定时间、快速傅里叶变换（FFT）分析和输出参数进行了研究。此外，使用基于忆阻器的运算放大器实现的维恩桥振荡器电路的效率已经通过应用电路进行了测试，并且所提出的基于忆阻器的运算放大器模型的准确性和适用性已经在理论上得到了广泛的检验，并得到了实验和仿真结果的支持。最后，表格中详细介绍了使用忆阻器运算放大器实现的振荡器电路的仿真和实验结果。