Abstract

The peculiarities of the surface processing of polycrystalline aluminum-nitride films on glass-ceramic and silicon substrates grown under identical conditions are considered. Aluminum-nitride films are obtained using the magnetron sputtering of a pure aluminum target (99.99%) in nitrogen–argon plasma at a magnetron power of 700 W. The consumption of working gases is 10 sccm for nitrogen and 4 sccm for argon. The film thickness is determined using a quartz resonator inside the chamber of the magnetron setup. Atomic force microscopy is used to study the surface relief of the targets before and after treatment by argon cluster ions. Small single crystallites are shown to grow on the initial surfaces, the lateral size of which is in the range of 250–550 nm. The depth of target etching by argon cluster ions is determined. Cluster ions with low energy per atom are shown to have a high efficiency of surface smoothing. A comparison of the surface morphology and surface-roughness parameters of aluminum nitride on different substrates obtained using atomic force microscopy is carried out. It is shown that aluminum nitride on silicon is smoothed more efficiently than on a glass-ceramic substrate.

中文翻译：

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氩团簇离子在微晶玻璃和硅衬底上加工多晶氮化铝薄膜的特点

摘要

考虑了在相同条件下生长的玻璃陶瓷和硅基板上多晶氮化铝薄膜的表面处理特性。在 700 W 的磁控管功率下，使用纯铝靶材 (99.99%) 在氮 - 氩等离子体中磁控溅射获得氮化铝薄膜。工作气体的消耗量为氮气 10 sccm 和氩气 4 sccm。使用磁控管装置腔内的石英谐振器确定薄膜厚度。原子力显微镜用于研究氩簇离子处理前后靶材的表面起伏。小单晶显示在初始表面上生长，其横向尺寸在 250-550 nm 范围内。确定由氩簇离子蚀刻的目标深度。每个原子具有低能量的簇离子显示出具有高的表面平滑效率。对使用原子力显微镜获得的不同衬底上的氮化铝的表面形貌和表面粗糙度参数进行了比较。结果表明，硅上的氮化铝比玻璃陶瓷基板上的平滑度更高。