Indium gallium nitride (InGaN)-based micro-LEDs (μLEDs) are suitable for meeting ever-increasing demands for high-performance displays owing to their high efficiency, brightness and stability^1,2,3,4,5. However, μLEDs have a large problem in that the external quantum efficiency (EQE) decreases with the size reduction^6,7,8,9. Here we demonstrate a blue InGaN/GaN multiple quantum well (MQW) nanorod-LED (nLED) with high EQE. To overcome the size-dependent EQE reduction problem^8,9, we studied the interaction between the GaN surface and the sidewall passivation layer through various analyses. Minimizing the point defects created during the passivation process is crucial to manufacturing high-performance nLEDs. Notably, the sol–gel method is advantageous for the passivation because SiO₂ nanoparticles are adsorbed on the GaN surface, thereby minimizing its atomic interactions. The fabricated nLEDs showed an EQE of 20.2 ± 0.6%, the highest EQE value ever reported for the LED in the nanoscale. This work opens the way for manufacturing self-emissive nLED displays that can become an enabling technology for next-generation displays.

基于氮化铟镓 (InGaN) 的微型 LED (μLED) 因其高效率、亮度和稳定性而适用于满足对高性能显示器日益增长的需求^1,2,3,4,5。然而，μLED 有一个很大的问题，即外部量子效率 (EQE) 会随着尺寸的减小而降低^6,7,8,9。在这里，我们展示了具有高 EQE 的蓝色 InGaN/GaN 多量子阱 (MQW) 纳米棒 LED (nLED)。克服依赖于尺寸的 EQE 减少问题^8,9，我们通过各种分析研究了GaN表面和侧壁钝化层之间的相互作用。最大限度地减少钝化过程中产生的点缺陷对于制造高性能 nLED 至关重要。值得注意的是，溶胶-凝胶法有利于钝化，因为 SiO ₂纳米颗粒吸附在 GaN 表面上，从而最大限度地减少了其原子相互作用。制造的 nLED 显示出 20.2 ± 0.6% 的 EQE，这是迄今为止报道的纳米级 LED 的最高 EQE 值。这项工作为制造自发光 nLED 显示器开辟了道路，该显示器可以成为下一代显示器的使能技术。