In this study, we present a high-efficiency InGaN red micro-LED fabricated by the incorporation of superlattice structure, atomic layer deposition passivation, and a distributed Bragg reflector, exhibiting maximum external quantum efficiency of 5.02% with a low efficiency droop corresponding to an injection current density of 112 A/cm2$112{\mathrm{A}/\mathrm{cm}}^2$. The fast carrier dynamics in the InGaN is characterized by using time-resolved photoluminescence, which is correlated to a high modulation bandwidth of 271 MHz achieved by a 6×$6\times$ 25-μm-sized micro-LED array with a data transmission rate of 350 Mbit/s at a high injection current density of 2000 A/cm2$2000{\mathrm{A}/\mathrm{cm}}^2$. It holds great promise for full-color micro-displays as well as high-speed visible light communication applications based on monolithic InGaN micro-LED technologies.

中文翻译：

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用于可见光通信的高效 InGaN 红色微型 LED

在这项研究中，我们展示了一种通过结合超晶格结构、原子层沉积钝化和分布式布拉格反射器制造的高效 InGaN 红色 micro-LED，其最大外部量子效率为 5.02%，效率下降对应于注入电流密度为112 A / cm 2 $112{\mathrm{A}/\mathrm{cm}}^2$。InGaN 中的快速载流子动力学特征在于使用时间分辨光致发光，这与 271 MHz 的高调制带宽相关，该调制带宽由6 ×$6\times$ 25-μm 尺寸的 micro-LED 阵列实现，数据传输速率为 350 Mbit/ s 在2000 A / cm 2的高注入电流密度下 $2000{\mathrm{A}/\mathrm{cm}}^2$. 它对基于单片 InGaN micro-LED 技术的全彩微型显示器以及高速可见光通信应用具有很大的前景。