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Electric Control of Exchange Bias Effect in FePS3–Fe5GeTe2 van der Waals Heterostructures
Nano Letters ( IF 9.6 ) Pub Date : 2022-07-31 , DOI: 10.1021/acs.nanolett.2c01370
Sultan Albarakati 1, 2 , Wen-Qiang Xie 3 , Cheng Tan 1 , Guolin Zheng 4 , Meri Algarni 1 , Junbo Li 4 , James Partridge 1 , Michelle J S Spencer 1 , Lawrence Farrar 1 , Yimin Xiong 4 , Mingliang Tian 4, 5 , Xiaolin Wang 6, 7 , Yu-Jun Zhao 3 , Lan Wang 1
Affiliation  

Manipulating the exchange bias (EB) effect using an electronic gate is a significant goal in spintronics. The emergence of van der Waals (vdW) magnetic heterostructures has provided improved means to study interlayer magnetic coupling, but to date, these heterostructures have not exhibited electrical gate-controlled EB effects. Here, we report electrically controllable EB effects in a vdW heterostructure, FePS3-Fe5GeTe2. By applying a solid protonic gate, the EB effects were repeatably electrically tuned. The EB field reaches up to 23% of the coercivity and the blocking temperature ranges from 30 to 60 K under various gate-voltages. The proton intercalations not only tune the average magnetic exchange coupling but also change the antiferromagnetic configurations in the FePS3 layer. These result in a dramatic modulation of the total interface exchange coupling and the resultant EB effects. The study is a significant step toward vdW heterostructure-based magnetic logic for future low-energy electronics.

中文翻译:

FePS3–Fe5GeTe2范德华异质结构中交换偏置效应的电控制

使用电子门控制交换偏置 (EB) 效应是自旋电子学的一个重要目标。范德华 (vdW) 磁性异质结构的出现为研究层间磁耦合提供了改进的手段,但迄今为止,这些异质结构尚未表现出电门控 EB 效应。在这里,我们报告了 vdW 异质结构中的电控 EB 效应,FePS 3 -Fe 5 GeTe 2. 通过应用固体质子门,EB 效应可重复地进行电调谐。在各种栅极电压下,EB 场的矫顽力高达 23%,阻断温度范围为 30 至 60 K。质子嵌入不仅调节平均磁交换耦合,而且改变了 FePS 3层中的反铁磁结构。这些导致总界面交换耦合和由此产生的 EB 效应的显着调制。该研究是朝着未来低能电子学的基于 vdW 异质结构的磁逻辑迈出的重要一步。
更新日期:2022-07-31
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