The resistive switching and synaptic behavior of a fabricated Ti/HfO₂/Pt crossbar array device are investigated. The results demonstrated that TiO_x layers are created by the movement of oxygen ions during the positive SET process, thereby improving the endurance and multilevel switching behavior of the device. The random properties of SET process were described with the help of stochastic model of memristor based on the length of conductive filament. The analysis of the mean first passage time allows estimating the parameters of the dielectric switching layer such as the activation energy of the diffusive defects, its variation under the influence of the driving voltage and the value of the working temperature. Furthermore, the conductive mechanism of the Ti/HfO₂/Pt device with temperature variations and Schottky emission fitting was studied. Furthermore, the potentiation, depression, and the spike-time dependent plasticity behavior of the Ti/HfO₂/Pt devices have been demonstrated by well-designed pulse inputs. The observed gradual change in conductance is suitable for a synaptic device in a neuromorphic system.

研究了制造的 Ti/HfO ₂ /Pt 交​​叉阵列器件的电阻转换和突触行为。结果表明，TiO _x层是由正SET过程中氧离子的运动产生的，从而提高了器件的耐用性和多级开关行为。借助基于导电丝长度的忆阻器随机模型描述了SET过程的随机特性。平均首次通过时间的分析允许估计介电开关层的参数，例如扩散缺陷的活化能、其在驱动电压和工作温度值影响下的变化。此外，Ti/HfO 的导电机制研究了具有温度变化和肖特基发射拟合的_{2 /Pt 器件。}此外，精心设计的脉冲输入已经证明了 Ti/HfO _{2 /Pt 器件}的增强、抑制和尖峰时间相关的可塑性行为。观察到的电导逐渐变化适用于神经形态系统中的突触装置。