Strategies to Control the Relaxation Kinetics of Ag-Based Diffusive Memristors and Implications for Device Operation,Advanced Electronic Materials

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Strategies to Control the Relaxation Kinetics of Ag-Based Diffusive Memristors and Implications for Device Operation
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2022-07-28 , DOI: 10.1002/aelm.202200549
Solomon Amsalu Chekol _{1,

2} , Stephan Menzel ₁ , Rainer Waser _{1,

3} , Susanne Hoffmann‐Eifert ₁

Affiliation

Diffusive memristors based on volatile electrochemical metallization (v-ECM) devices are of broad interest for applications in emerging memory technologies and neuromorphic computing areas due to their interesting features such as thresholding, self-relaxation, and energy-efficient switching behaviors. Recently, the nonlinear threshold kinetics and the correlation of filament formation and growth with its relaxation behavior are uncovered from a physical perspective. However, the complexity of the diffusive memristors’ behavior might still hamper a straight transfer into emerging computing applications. Facing this challenge means going beyond the single device level and understanding the impact of other circuitry elements for further optimization of device operation. In this work, the effect of a series resistor on the switching dynamics of Ag/HfO₂/Pt diffusive memristor devices by deploying various programming schemes with different resistances is investigated. Furthermore, all results and their implications on devices’ operation are compressively discussed. These findings help to further advance the optimization of the operating condition of diffusive memristors.

中文翻译：

控制银基扩散忆阻器弛豫动力学的策略及其对器件操作的影响

基于挥发性电化学金属化 (v-ECM) 器件的扩散忆阻器因其阈值、自松弛和节能开关行为等有趣特性而在新兴存储技术和神经形态计算领域的应用中受到广泛关注。最近，从物理角度揭示了非线性阈值动力学以及细丝形成和生长与其弛豫行为的相关性。然而，扩散忆阻器行为的复杂性可能仍会阻碍直接转移到新兴计算应用程序中。面对这一挑战意味着要超越单个设备级别并了解其他电路元件的影响，以进一步优化设备操作。在这项工作中，串联电阻器对 Ag/HfO 开关动态的影响通过部署具有不同电阻的各种编程方案，研究了_{2 /Pt 扩散忆阻器器件。}此外，还压缩讨论了所有结果及其对设备操作的影响。这些发现有助于进一步优化扩散忆阻器的工作条件。

更新日期：2022-07-28

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