Defect construction and heteroatom doping are effective strategies for improving photocatalytic activity of carbon nitride (g-C₃N₄). In this work, N defects were successfully prepared via cold plasma. High-energy electrons generated by plasma can produce N defects and embed sulfur atoms into g-C₃N₄. The N defects obviously promoted photocatalytic degradation performance that was 7.5 times higher than that of pure g-C₃N₄. The concentration of N defects can be tuned by different power and time of plasma. With the increase in N defects, the photocatalytic activity showed a volcanic trend. The g-C₃N₄ with moderate concentration of N defects exhibited the highest photocatalytic activity. S-doped g-C₃N₄ exhibited 11.25 times higher photocatalytic activity than pure g-C₃N₄. It provided extra active sites for photocatalytic reaction and improved stability of N defects. The N vacancy-enriched and S-doped g-C₃N₄ are beneficial for widening absorption edge and improving the separation efficiency of electron and holes.

缺陷构建和杂原子掺杂是提高氮化碳（gC ₃ N ₄）光催化活性的有效策略。在这项工作中，通过冷等离子体成功制备了 N 缺陷。等离子体产生的高能电子可以产生N缺陷并将硫原子嵌入gC ₃ N ₄中。N缺陷明显促进了比纯gC ₃ N ₄高7.5倍的光催化降解性能。N缺陷的浓度可以通过不同的等离子体功率和时间来调节。随着N缺陷的增加，光催化活性呈现火山爆发的趋势。gC ₃ N ₄具有中等浓度的N缺陷表现出最高的光催化活性。S掺杂的gC ₃ N _{4表现出比纯gC 3} N ₄高11.25倍的光催化活性。它为光催化反应提供了额外的活性位点，并提高了 N 缺陷的稳定性。N空位富集和S掺杂的gC ₃ N ₄有利于拓宽吸收边，提高电子和空穴的分离效率。