The use of organic, oxide and low-dimensional materials in field-effect transistors has now been studied for decades. However, properly reporting and comparing device performance remains challenging due to the interdependency of multiple device parameters. The interdisciplinarity of this research community has also led to a lack of consistent reporting and benchmarking guidelines. Here we propose guidelines for reporting and benchmarking key field-effect transistor parameters and performance metrics. We provide an example of this reporting and benchmarking process using a two-dimensional semiconductor field-effect transistor. Our guidelines should help promote an improved approach for assessing device performance in emerging field-effect transistors, helping the field to progress in a more consistent and meaningful way.

在场效应晶体管中使用有机、氧化物和低维材料现在已经研究了几十年。然而，由于多个设备参数的相互依赖性，正确报告和比较设备性能仍然具有挑战性。该研究团体的跨学科性也导致缺乏一致的报告和基准指南。在这里，我们提出了报告和基准测试关键场效应晶体管参数和性能指标的指南。我们提供了一个使用二维半导体场效应晶体管的报告和基准测试过程的示例。我们的指导方针应该有助于促进一种改进的方法来评估新兴场效应晶体管的器件性能，帮助该领域以更加一致和有意义的方式取得进展。