Abstract

Reduced graphene oxide (RGO) thin films were prepared on silicon substrates by a modified liquid-air interface self-assembly method and a hydroiodic acid reduction method. Planar on-chip micro-supercapacitors with interdigital structure electrodes (RGO-POMSs) were prepared by photolithography and gold sputtering on the electrode lugs. Area capacitance of interdigital RGO-POMSs was 51.72 μF cm⁻². They also had 0.0072 μW h cm⁻² of energy density and 59.78 μW cm⁻² of power density. Due to the short ion transport path caused by interdigital electrodes, the charge discharge time constant of the device was only 0.029 ms, which could realize rapid charge discharge. In addition, they also had good cycle stability and could maintain 82% capacitance after 4500 cycles of charge and discharge. The cyclic voltammetry test showed that the device still worked well at the ultra-high scan rate of 10,000 V s⁻¹. This showed that RGO-POMSs had considerable prospects in the research field of micro energy storage devices.

摘要

采用改进的液-气界面自组装法和氢碘酸还原法在硅衬底上制备还原氧化石墨烯（RGO）薄膜。通过光刻和金溅射在电极接线片上制备了具有叉指结构电极的平面片上微型超级电容器 (RGO-POMS)。叉指型 RGO-POMS 的面积电容为 51.72 μF cm ^-2。它们还具有 0.0072 μW h cm ^-2的能量密度和 59.78 μW cm ^-2的功率密度。由于叉指电极造成的离子传输路径较短，该器件的充放电时间常数仅为0.029 ms，可实现快速充放电。此外，它们还具有良好的循环稳定性，经过 4500 次充放电循环后仍能保持 82% 的电容。^{循环伏安测试表明，该器件在10,000 V s -1}的超高扫描速率下仍能正常工作。这表明RGO-POMSs在微型储能器件研究领域具有可观的前景。