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Design and Realization of Ferroelectric Thin Film Physical Parameters Test System Based on Electronic Information Technology
Integrated Ferroelectrics ( IF 0.7 ) Pub Date : 2022-07-28 , DOI: 10.1080/10584587.2022.2074234
Yuanshao Hou 1
Affiliation  

Abstract

Ferroelectric thin film materials are constantly used in our lives. When testing the physical parameters of the ferroelectric film, the thickness of the film is very small or only nanometers, which will bring great difficulties to the accuracy and sensitivity of the test. To understand the role of electronic information technology in the measurement of the physical parameters of ferroelectric thin films, this paper adopts the sweep field method and the sweep frequency method to test the parameters of the ferroelectric thin film. The system uses PZT film as the test material to complete the electrical hysteresis loop measurement experiment in an extremely clean environment. The system hardware circuit is designed, which can complete the measurement of the electrical hysteresis loop, the output of the sinusoidal signal, the data acquisition, and the power supply of the system. The research results show that the parameters of the traditional PZT film material change greatly during the test. The thickness of the improved PLSZT film is about 10% thinner than that of the PZT film. The result can be better in the parameter test.



中文翻译:

基于电子信息技术的铁电薄膜物理参数测试系统的设计与实现

摘要

铁电薄膜材料在我们的生活中不断被使用。在测试铁电薄膜的物理参数时,薄膜的厚度很小或者只有纳米,这会给测试的准确性和灵敏度带来很大的困难。为了解电子信息技术在铁电薄膜物理参数测量中的作用,本文采用扫场法和扫频法对铁电薄膜的参数进行测试。该系统以PZT薄膜为测试材料,在极其洁净的环境下完成电滞回线测量实验。设计了系统硬件电路,可完成电滞回线的测量、正弦信号的输出、数据采集、和系统的电源。研究结果表明,传统PZT薄膜材料的参数在测试过程中变化很大。改进后的PLSZT薄膜的厚度比PZT薄膜薄10%左右。在参数测试中结果会更好。

更新日期:2022-07-29
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