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Systematic Study on Preparation of CuInS2 Films with Chalcopyrite from Nitrates
Integrated Ferroelectrics ( IF 0.7 ) Pub Date : 2022-07-28 , DOI: 10.1080/10584587.2022.2074236
Jing Li 1 , Jie Du 1 , Kegao Liu 1 , Liuyang Yu 1
Affiliation  

Abstract

The Chalcopyrite CuInS2 films were prepared from nitrates below 220 °C. When the anhydrous ethanol is used as the solvent, the reaction cycle, temperature and holding time are main factors affecting crystallization. Increasing the reaction cycle, temperature and holding time are beneficial to the crystallinity. CuInS2 films prepared with thioacetamide and thiourea as sulfur sources have the chalcopyrite structure, the crystallinity of CuInS2 film prepared by thiourea is slightly better than that of by thioacetamide. It consists of spherical particles with diameters of 0.1 ∼ 0.4 μm. The band estimated gap of chalcopyrite CuInS2 film samples is about 1.49 ∼ 1.51 eV.



中文翻译:

硝酸盐中黄铜矿制备CuInS2薄膜的系统研究

摘要

黄铜矿CuInS 2薄膜由硝酸盐在220℃以下制备。以无水乙醇为溶剂时,反应周期、温度和保温时间是影响结晶的主要因素。增加反应周期、温度和保温时间有利于结晶度。以硫代乙酰胺和硫脲为硫源制备的CuInS 2薄膜具有黄铜矿结构,硫脲制备的CuInS 2薄膜的结晶度略好于硫代乙酰胺。它由直径为 0.1 ∼ 0.4 μm 的球形颗粒组成。黄铜矿CuInS 2薄膜样品的能带估计间隙约为1.49~1.51 eV。

更新日期:2022-07-29
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