Abstract

Cu₂O is a p-type semiconductor with a band gap of about 2.17 eV. It has an octahedral cubic structure, and has a broad prospect in photocatalysis, battery, and superconductor. The Cu₂O thin films prepared by electrochemical deposition method can effectively control the morphology of the sample with low cost and easy operation. Traditionally, the preparation methods of Cu₂O thin films mostly use alkaline systems. In this paper, Cu₂O thin films were successfully prepared by the electrodeposition method in an acidic system, using copper acetate (Cu(CH₃COO)₂·H₂O) and sodium acetate (CH₃COONa) as raw materials. The cyclic voltammetry curve of the solution was tested on an electrochemical workstation. The phase composition of the thin films were characterized using X-ray diffraction (XRD). The surface morphology of the thin films were analyzed by using scanning electron microscope(SEM). The influence of process conditions such as deposition potential, deposition time and electrolyte solution concentration on the preparation of thin films was studied. The results shows that the moderate extension of the deposition time and the increase of the electrolyte solution concentration are beneficial to the preparation of Cu₂O thin films. When the deposition potential is −0.1 V, the deposition time is 30 min, and the electrolyte solution concentration is 0.06 mol/L, the continuous and dense Cu₂O thin films can be obtained. The XRD peaks of Cu₂O thin films correspond to the (110), (111), and (200) crystal planes respectively

摘要

Cu ₂ O是带隙约为2.17 eV的p型半导体。它具有八面体立方结构，在光催化、电池、超导体等方面具有广阔的应用前景。采用电化学沉积法制备的Cu ₂ O薄膜可以有效控制样品的形貌，成本低，操作简单。传统上，Cu ₂ O薄膜的制备方法大多采用碱性体系。本文采用醋酸铜（Cu(CH ₃ COO) ₂ ·H _{2 O}）和醋酸钠（CH ₃COONa) 作为原料。在电化学工作站上测试溶液的循环伏安曲线。使用 X 射线衍射 (XRD) 表征薄膜的相组成。采用扫描电子显微镜(SEM)分析薄膜的表面形貌。研究了沉积电位、沉积时间和电解液浓度等工艺条件对薄膜制备的影响。结果表明，适度延长沉积时间和增加电解液浓度有利于Cu ₂ O薄膜的制备。当沉积电位为-0.1 V，沉积时间为30 min，电解液浓度为0.06 mol/L时，连续致密的Cu_{可以得到2} O 薄膜。_{Cu 2} O薄膜的XRD峰分别对应于(110)、(111)和(200)晶面