Spin orbit torque magnetic tunnel junction (SOT-MTJ) has been widely used for designing nonvolatile flip-flop (NVFF), thanks to its ultrafast switching speed, zero static power consumption, nearly unlimited endurance, etc. However, in the space environment, the write pulse width of the SOT-MTJ is comparable to radiation-induced current duration. Thus, the SOT-MTJ-based NVFF may suffer from soft error induced by the nonvolatile single event upset (NVSEU) in the backup mode. In this paper, we analyze the sensitive nodes in different work modes and propose the radiation hardening circuits for master–slave NVFF (MS-NVFF) to solve the NVSEUs. Based on a physics-based SOT-MTJ compact model and a 40$$nm CMOS design kit, the reliability of MS-NVFF is verified by simulation with 2$$pC charge, which could be reliably integrated into aerospace and avionics electronics in hostile environments.

自旋轨道转矩磁隧道结 (SOT-MTJ) 因其超快的开关速度、零静态功耗、近乎无限的耐用性等，已被广泛用于设计非易失性触发器 (NVFF)。然而，在空间环境中， SOT-MTJ 的写入脉冲宽度与辐射感应电流持续时间相当。因此，基于 SOT-MTJ 的 NVFF 在备份模式下可能会遭受由非易失性单粒子翻转 (NVSEU) 引起的软错误。在本文中，我们分析了不同工作模式下的敏感节点，并提出了主从NVFF（MS-NVFF）的辐射硬化电路来解决NVSEU。基于基于物理的 SOT-MTJ 紧凑模型和 40$$nm CMOS 设计套件，MS-NVFF 的可靠性通过仿真验证了 2$$PC 电荷，可在恶劣环境中可靠地集成到航空航天和航空电子设备中。