Raman Spectroscopy of Few-Layers TaS2 and Mo-Doped TaS2 with Enhanced Superconductivity,Advanced Electronic Materials

当前位置： X-MOL 学术 › Adv. Electron. Mater. › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

Raman Spectroscopy of Few-Layers TaS2 and Mo-Doped TaS2 with Enhanced Superconductivity
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2022-07-25 , DOI: 10.1002/aelm.202200457
Santiago Valencia‐Ibáñez ₁ , Diana Jiménez‐Guerrero ₁ , Jose D. Salcedo‐Pimienta ₁ , Karen Vega‐Bustos ₁ , Gabriel Cárdenas‐Chirivi _{1,

2} , Laura López‐Manrique ₃ , Edwin Herrera‐Vasco _{2,

4} , Jose A. Galvis ₂ , Yenny Hernández ₁ , Paula Giraldo‐Gallo ₁

Affiliation

The use of simple, fast, and economic experimental tools to characterize low-dimensional materials is an important step in the process of democratizing their use. Raman spectroscopy has arisen as a way of indirectly determining the thickness of nanolayers of transition metal dichalcogenides (TMDs), avoiding the use of more expensive tools such as atomic force microscopy, and it is therefore a widely used technique in the study of semiconducting TMDs. However, the study of many metallic TMDs in the limit of few atomic layers is still behind when compared to their semiconducting counterparts, partly due to the lack of similar alternative characterization studies. In this work the characterization of the Raman spectrum, specifically of the E

◂◽:▸_{2 g}^{1} \[_{{\bf 2g}}^{\bf 1}\]

- and A_1g-modes, of mechanically exfoliated Ta_1−xMo_xS₂, a metallic TMD which exhibits charge density wave (CDW) formation and superconductivity, is presented. The clear identification of contributions coming from the SiO₂/Si substrate allowed the isolation of the individual E

◂◽:▸_{2 g}^{1} $_{{\bf 2g}}^{\bf 1}$

- and A_1g-modes of the samples and, for the first time, the observation of a clear evolution of their Raman shifts as a function of sample thickness. This provides a way of indirectly determining sample thickness in the limit of few atomic layers in Ta_1−xMo_xS₂.

中文翻译：

具有增强超导性的少层 TaS2 和 Mo 掺杂 TaS2 的拉曼光谱

使用简单、快速和经济的实验工具来表征低维材料是其使用民主化过程中的重要一步。拉曼光谱已成为一种间接测定过渡金属二硫属化物 (TMD) 纳米层厚度的方法，避免使用更昂贵的工具，如原子力显微镜，因此它是半导体 TMD 研究中广泛使用的技术。然而，与半导体对应物相比，在少数原子层的限制下对许多金属 TMD 的研究仍然落后，部分原因是缺乏类似的替代表征研究。在这项工作中，拉曼光谱的表征，特别是E