Using a component having an amine group (−NH₂) or a carboxyl group (−COOH) for a cleaning solution, the etching rates of copper oxide and copper were analyzed by measuring the solubility of copper to evaluate the etch residue removal properties. Based on this, it was attempted to establish the basis of a cleaning process for removing etch residues in the copper back end of line (BEOL) process. In addition, the etch rate and surface structure change of fluorine-doped fluorosilicate glass (FSG), Black Diamond (BD), and methyl group-doped organosilicate glass (OSG), which are low-k dielectric materials, were analyzed. The copper oxide etching rate of the component having an amine group showed a tendency to increase as the basicity of the solution increased. Also, the solubility of copper oxide in the amine solution decreased with the increase of the carbon length in the amine molecular structure. The solution having a carboxyl group compared to the amine group has a high etching rate for the low-k dielectric material. The amine component showed reactivity only in the basic region and, on the contrary, the carboxyl group component is reactive only in the acidic region.

使用具有胺基(-NH ₂) 或羧基 (-COOH) 用于清洁溶液，通过测量铜的溶解度来分析氧化铜和铜的蚀刻速率，以评估蚀刻残留物去除性能。在此基础上，试图建立用于去除铜后端（BEOL）工艺中的蚀刻残留物的清洁工艺的基础。此外，分析了低k介电材料掺氟氟硅酸盐玻璃（FSG）、黑金刚石（BD）和甲基掺杂有机硅酸盐玻璃（OSG）的刻蚀速率和表面结构变化。具有胺基的成分的氧化铜蚀刻速率显示出随着溶液的碱度增加而增加的趋势。还，氧化铜在胺溶液中的溶解度随着胺分子结构中碳长度的增加而降低。与胺基相比，具有羧基的溶液对低k介电材料具有高蚀刻速率。胺成分仅在碱性区域具有反应性，相反，羧基成分仅在酸性区域具有反应性。