The anodization of metals is a simple and low cost method of producing metal-oxides. This article discusses the procedure for anodizing tantalum (Ta) and details the characterization of capacitors formed by tantalum pentoxide (Ta₂O₅) dielectric. The breakdown field for the un-annealed, 200 °C and 400 °C annealed samples are 5.4, 5.1 and 3.3 MV/cm respectively. A number of factors affect the electrical properties of dielectrics and from our experiments, we observe that at an annealing temperature of 200 °C and pressure of 7.5 Torr, the dominant conduction mechanism of the capacitor changed from Schottky Emission to Poole-Frenkel Emission. In addition, we report the deposition of exfoliated WSe₂ on anodic tantalum using the scotch tape method. Good adhesion has been observed between the WSe₂ flakes and the anodic tantalum with obvious colour variation in relation to the thickness of the WSe₂. Subsequently, a WSe₂ Field Effect Transistor (FET) has been designed and fabricated using a mask-less lithographic technique. The anodic tantalum has been used as the gate dielectric while the bulk Ta as the back gate electrode. The transfer characteristics of the integrated device have been discussed, showing promise for low power operation.

金属的阳极氧化是一种生产金属氧化物的简单且低成本的方法。本文讨论了阳极氧化钽 (Ta) 的程序，并详细介绍了由五氧化二钽 (Ta ₂ O ₅ ) 电介质形成的电容器的特性。未退火、200 °C 和 400 °C 退火样品的击穿场分别为 5.4、5.1 和 3.3 MV/cm。许多因素影响电介质的电性能，从我们的实验中，我们观察到在 200 °C 的退火温度和 7.5 Torr 的压力下，电容器的主要传导机制从肖特基发射变为 Poole-Frenkel 发射。此外，我们报告了剥离的 WSe _2的沉积使用透明胶带法在阳极钽上。_{在WSe 2}薄片和阳极钽之间观察到良好的粘附性，并且与WSe ₂的厚度相关的颜色变化明显。随后，使用无掩模光刻技术设计和制造了WSe ₂场效应晶体管（FET）。阳极钽用作栅极电介质，而体钽用作背栅电极。已经讨论了集成器件的传输特性，显示出低功耗操作的前景。