Low-temperature deuterium (D₂) annealing (LTDA) is applied to improve performances and reliability of a MOSFET. The LTDA is performed at 300 °C, which is at least 100 °C lower than the widely used temperature of forming gas annealing (FGA) with H₂, which contributes to reducing a thermal budget especially in the backend-of-the-line (BEOL). DC performances, such as subthreshold slope (SS), threshold voltage (V_TH), and on-current (I_ON) were statistically compared in cases with and without the LTDA to evaluate their improvements. Profiling of D₂ by secondary ion mass spectrometry (SIMS) supports that D₂ can permeate a gate oxide and passivate dangling bonds and traps near the interface of the SiO₂-Si channel. Therefore I_ON, SS, and V_TH were improved, gate leakage current (I_G) was reduced, and immunity to positive bias stress (PBS) became better.

低温氘（D ₂）退火（LTDA）用于提高MOSFET的性能和可靠性。_{LTDA 在 300 °C 下进行，比广泛使用的 H 2}形成气体退火 (FGA) 温度至少低 100 °C ，这有助于减少热预算，尤其是在生产线后端（BEOL）。DC 性能，例如亚阈值斜率 ( SS )、_阈值电压 ( VTH ) 和导通电流 ( I _ON ) 在有和没有 LTDA 的情况下进行了统计比较，以评估它们的改进。通过二次离子质谱 (SIMS)分析 D _{2支持 D 2可以渗透栅极氧化物并钝化SiO 2} -Si通道界面附近的悬空键和陷阱。因此， I _ON、SS和V _TH得到改善，栅极漏电流（I _G）降低，并且对正偏置应力（PBS）的抵抗力变得更好。