4-layer NbSe₂ is grown on SiO₂ by molecular beam epitaxy. The in-situ X-ray photoelectron spectroscopy measurements suggest an Nb-rich stoichiometry (Nb_1+xSe₂) likely due to the intercalation of Nb atoms in between the NbSe₂ layers. The metallic nature of the samples is confirmed using scanning tunneling microscopy and local density of state measurements as well as band structure calculations. This metallic nature is consistent with the small measured Seebeck coefficient and large electrical conductivity values. A change of sign in the Seebeck coefficient is observed in the bulk single crystal sample at 50 K, and in the polycrystalline few-layer sample at 120 K. Since the samples are metallic, this change of sign is the result of a change in the density of state slope at the Fermi level. The temperature dependence of the measured Seebeck coefficient matches with theoretical calculations for 4-layer NbSe₂. The room temperature Seebeck coefficient is negative, but when oxidized, that of the few-layer sample changed to positive. The in-plane thermal conductivity of the few-layer samples is measured using the heat diffusion imaging method at low temperatures and is (32 ± 10) W/m∙K at 200 K.

通过分子束外延在SiO ₂上生长4层NbSe _{2 。}原位 X 射线光电子能谱测量表明富含 Nb 的化学计量 (Nb _1+x Se ₂ ) 可能是由于 Nb 原子在 NbSe _{2之间的插入}层。使用扫描隧道显微镜和局部状态密度测量以及能带结构计算来确认样品的金属性质。这种金属性质与小的测量塞贝克系数和大的电导率值一致。在 50 K 的大块单晶样品和 120 K 的多晶少层样品中观察到塞贝克系数的符号变化。由于样品是金属的，这种符号变化是费米能级的状态斜率密度。_{测量的塞贝克系数的温度依赖性与 4 层 NbSe 2}的理论计算相匹配. 室温塞贝克系数为负值，但氧化后，几层样品的塞贝克系数变为正值。使用热扩散成像方法在低温下测量了几层样品的面内热导率，在 200 K 时为 (32 ± 10) W/m∙K。