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Floquet Fractional Chern Insulators and Competing Phases in Twisted Bilayer Graphene
arXiv - PHYS - Strongly Correlated Electrons Pub Date : 2022-07-15 , DOI: arxiv-2207.07314 Peng-Sheng Hu, Zhao Liu
arXiv - PHYS - Strongly Correlated Electrons Pub Date : 2022-07-15 , DOI: arxiv-2207.07314 Peng-Sheng Hu, Zhao Liu
We study the many-body physics in twisted bilayer graphene coupled to
periodic driving of a circularly polarized light. In the limit of high driving
frequency $\Omega$, we use Floquet theory to formulate the system by an
effective static Hamiltonian truncated to the order of $\Omega^{-2}$, which
consists of a single-electron part and the screened Coulomb interaction. We
numerically simulate this effective Hamiltonian by extensive exact
diagonalization. Remarkably, under appropriate twist angle and driving
strength, we identify Floquet fractional Chern insulator states in the
partially filled Floquet valence band. We characterize these topologically
ordered states by ground-state degeneracy, spectral flow, and entanglement
spectrum. We also find topologically trivial charge density waves and
interaction-induced Fermi liquid which strongly compete with fractional Chern
insulator states.
中文翻译:
扭曲双层石墨烯中的 Floquet 分数陈绝缘体和竞争相
我们研究了与周期性驱动圆偏振光耦合的扭曲双层石墨烯中的多体物理。在高驱动频率 $\Omega$ 的限制下,我们使用 Floquet 理论通过截断到 $\Omega^{-2}$ 量级的有效静态哈密顿量来制定系统,该系统由单电子部分和筛选库仑相互作用。我们通过广泛的精确对角化来数值模拟这种有效的哈密顿量。值得注意的是,在适当的扭转角和驱动强度下,我们确定了部分填充的 Floquet 价带中的 Floquet 分数 Chern 绝缘体状态。我们通过基态退化、谱流和纠缠谱来表征这些拓扑有序态。
更新日期:2022-07-18
中文翻译:
扭曲双层石墨烯中的 Floquet 分数陈绝缘体和竞争相
我们研究了与周期性驱动圆偏振光耦合的扭曲双层石墨烯中的多体物理。在高驱动频率 $\Omega$ 的限制下,我们使用 Floquet 理论通过截断到 $\Omega^{-2}$ 量级的有效静态哈密顿量来制定系统,该系统由单电子部分和筛选库仑相互作用。我们通过广泛的精确对角化来数值模拟这种有效的哈密顿量。值得注意的是,在适当的扭转角和驱动强度下,我们确定了部分填充的 Floquet 价带中的 Floquet 分数 Chern 绝缘体状态。我们通过基态退化、谱流和纠缠谱来表征这些拓扑有序态。