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Multiferroic Properties of Pure and Ion-Doped BiCrO 3 Bulk and Thin Films
Physica Status Solidi (B) - Basic Solid State Physics ( IF 1.5 ) Pub Date : 2022-07-14 , DOI: 10.1002/pssb.202200171
Iliana N. Apostolova 1 , Angel T. Apostolov 2 , Julia Wesselinowa 3
Affiliation  

The multiferroic properties of BiCrO 3 (BCO) bulk and thin films are investigated for the first time using a microscopic model. The influence of ion doping on the multiferroic properties of BCO is also studied because the doping process changes the physical properties and can be used for potential applications in magnetoelectronic devices. The magnetization M increases by Mn and decreases by Ga-ion doping whereas the Néel temperature T N decreases in both cases. There are some discrepancies by polarization whether it is ferroelectric or antiferroelectric. It is shown that bulk pure BCO is antiferroelectric because the electric field dependence of polarization P shows a double hysteresis loop and the dielectric constant has no anomalies at T N . In Ga-, Mn- or Ti-doped BCO a ferroelectric polarization appears. The specific heat shows a peak at T N for BCO. By Ga doping, this peak vanishes with increasing x. The multiferroic behavior of BCO is demonstrated in the magnetic field dependence of the dielectric constant. In BCO thin films, ferroelectric and ferromagnetic behavior is observed.

中文翻译:

纯和离子掺杂 BiCrO 3 块状薄膜和薄膜的多铁性

的多铁性 铬酸铋 3个 (BCO) 体膜和薄膜首次使用显微模型进行研究。还研究了离子掺杂对 BCO 多铁性性质的影响,因为掺杂过程改变了物理性质,可用于磁电子器件的潜在应用。磁化强度M随 Mn 增加而随 Ga 离子掺杂而减小,而 Néel 温度 在这两种情况下都减少。无论是铁电还是反铁电,极化都存在一些差异。结果表明,大块纯 BCO 是反铁电的,因为极化P的电场依赖性显示出双磁滞回线,并且介电常数在 . 在 Ga、Mn 或 Ti 掺杂的 BCO 中出现铁电极化。比热峰值出现在 对于 BCO。通过 Ga 掺杂,该峰随着x的增加而消失。BCO 的多铁性行为在介电常数的磁场依赖性中得到证明。在 BCO 薄膜中,观察到铁电和铁磁行为。
更新日期:2022-07-14
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