We have developed a generalized numerical model for gate leakage current ($I_G$) in normally off pGaN/AlGaN/GaN high electron mobility transistors. Across all devices, leakage primarily occurs via Fowler-Nordheim tunneling (FNT) with Trap assisted tunneling (TAT) responsible for some additional leakage at low gate bias in some devices. The model is validated against experimental data available in the literature for different devices from multiple research groups. A single model with a consistent set of parameters fits the voltage and temperature dependence of the leakage current for devices with different Schottky contact materials, device dimensions, and fabrication processes.

我们开发了栅极漏电流的广义数值模型（${我}_G$) 在常关 pGaN/AlGaN/GaN 高电子迁移率晶体管中。在所有器件中，泄漏主要通过 Fowler-Nordheim 隧道 (FNT) 发生，其中陷阱辅助隧道 (TAT) 负责在某些器件中低栅极偏压下的一些额外泄漏。该模型针对来自多个研究组的不同设备的文献中可用的实验数据进行了验证。具有一组一致参数的单个模型适合具有不同肖特基接触材料、器件尺寸和制造工艺的器件的漏电流的电压和温度依赖性。