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Nonvolatile Logic-in-Memory Computing based on Solution-Processed CuI Memristor
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2022-07-15 , DOI: 10.1002/aelm.202200089 Bochang Li 1, 2 , Wei Wei 1 , Li Luo 1, 3 , Ming Gao 1 , Zhi Gen Yu 4 , Sifan Li 1 , Kah‐Wee Ang 1 , Chunxiang Zhu 1
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2022-07-15 , DOI: 10.1002/aelm.202200089 Bochang Li 1, 2 , Wei Wei 1 , Li Luo 1, 3 , Ming Gao 1 , Zhi Gen Yu 4 , Sifan Li 1 , Kah‐Wee Ang 1 , Chunxiang Zhu 1
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Memristors are intensively studied as being regarded as the critical components to realize the in-memory computing paradigm. A novel electrochemical metallization memristor based on solution-processed Pt/CuI/Cu structure is proposed and demonstrated in this work, with a high resistance switching ratio of 1.53 × 107. Owing to the efficient drift paths provided by Cu vacancies for Cu cations in CuI, very small operating voltages (Vset = 0.64 V and Vreset = −0.19 V) are characterized, contributing to ultralow standby power consumption of 9 fW and per set transition of 8.73 µW. Using CuI memristor arrays, a set of Boolean logic operations and a half-adder are implemented. Moreover, by building the model for a 75 × 48 one-transistor-one-memristor array, the feasibility of hardware encryption and decryption for images is verified. All these demonstrate that solution-processed CuI memristors possess great potential in constructing energy-efficient logic-in-memory computing architectures.
中文翻译：
基于溶液处理的CuI忆阻器的非易失性内存逻辑计算
忆阻器被深入研究为实现内存计算范式的关键组件。本文提出并展示了一种基于溶液处理 Pt/CuI/Cu 结构的新型电化学金属化忆阻器，具有 1.53 × 10 7的高电阻切换比。由于 Cu 空位为 CuI 中的 Cu 阳离子提供了有效的漂移路径，因此工作电压非常小（V set = 0.64 V 和V reset = −0.19 V) 的特性，有助于实现 9 fW 的超低待机功耗和 8.73 µW 的每组转换。使用 CuI 忆阻器阵列，实现了一组布尔逻辑运算和一个半加器。此外，通过建立一个75×48的一晶体管一忆阻器阵列模型，验证了图像硬件加解密的可行性。所有这些都表明，溶液处理的 CuI 忆阻器在构建高能效的内存逻辑计算架构方面具有巨大的潜力。
更新日期：2022-07-15
中文翻译：
基于溶液处理的CuI忆阻器的非易失性内存逻辑计算
忆阻器被深入研究为实现内存计算范式的关键组件。本文提出并展示了一种基于溶液处理 Pt/CuI/Cu 结构的新型电化学金属化忆阻器，具有 1.53 × 10 7的高电阻切换比。由于 Cu 空位为 CuI 中的 Cu 阳离子提供了有效的漂移路径，因此工作电压非常小（V set = 0.64 V 和V reset = −0.19 V) 的特性，有助于实现 9 fW 的超低待机功耗和 8.73 µW 的每组转换。使用 CuI 忆阻器阵列，实现了一组布尔逻辑运算和一个半加器。此外，通过建立一个75×48的一晶体管一忆阻器阵列模型，验证了图像硬件加解密的可行性。所有这些都表明，溶液处理的 CuI 忆阻器在构建高能效的内存逻辑计算架构方面具有巨大的潜力。
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