Resistive Random Access Memory Behaviors in Organic–Inorganic Hybrid Ultra-Thin Films,Advanced Electronic Materials

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Resistive Random Access Memory Behaviors in Organic–Inorganic Hybrid Ultra-Thin Films
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2022-07-14 , DOI: 10.1002/aelm.202200432
Min Ju Kim ₁ , Alba Martinez ₂ , Jaejoong Jeong ₂ , Seongho Kim ₂ , Wan Sik Hwang ₃ , Byung Jin Cho ₂

Affiliation

Resistive random-access memory (ReRAM) has been considered for future memory devices, because of its low-power consumption and a high degree of integration. In this study, hybrid (H-) ReRAM devices are proposed using ultra-thin (<10 nm) Al, Hf, and Zr hybrid films prepared via initiated chemical vapor deposition (iCVD). The hybrid films homogeneously consist of organic and inorganic components, which allow simultaneous metal atoms migration and oxygen vacancy generation. Regardless of hybrid matrix, H-ReRAMs show highly reliable performance results (on/off ratio >10⁴, endurance >10⁶, retention >10⁴ s), which are notable results compared to conventional ReRAM devices. The resistance changes of the conducting filament in the devices are observed under various temperature conditions to prove the heterogenous filament dynamics in the hybrid matrix. The conducting filament composes of a metallic component and oxygen vacancies give unique properties to H-ReRAM devices, according to the combination of electrode and hybrid material. It has the potential to precise control of conducting filament by two different filament dynamics in the hybrid matrix. The H-ReRAM is one of the candidates for alternative memory devices as well as neuromorphic and cognitive computing devices.

中文翻译：

有机-无机混合超薄膜中的电阻随机存取存储器行为

电阻式随机存取存储器 (ReRAM) 已被考虑用于未来的存储设备，因为它具有低功耗和高度集成的特点。在这项研究中，提出了混合 (H-) ReRAM 器件，该器件使用通过引发化学气相沉积 (iCVD) 制备的超薄 ( < 10 nm) Al、Hf 和 Zr 混合膜。混合膜均匀地由有机和无机组分组成，允许同时金属原子迁移和氧空位产生。无论混合矩阵如何，H-ReRAM 都显示出高度可靠的性能结果（开/关比> 10 ⁴，耐久性> 10 ⁶，保留> 10 ⁴ s)，与传统的 ReRAM 器件相比，这是显着的结果。在各种温度条件下观察器件中导电灯丝的电阻变化，以证明混合矩阵中的异质灯丝动力学。根据电极和混合材料的组合，导电灯丝由金属成分和氧空位组成，为 H-ReRAM 器件提供了独特的性能。它有可能通过混合矩阵中的两种不同的灯丝动力学来精确控制导电灯丝。H-ReRAM 是替代存储设备以及神经形态和认知计算设备的候选者之一。

更新日期：2022-07-14

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