In recent years, perovskite light-emitting diodes (PeLEDs) have developed rapidly with the highest external quantum efficiency exceeding 20%. Their unbalanced carrier injection and non-radiative recombination assisted by defects lead to the destruction of perovskite crystal structures and poor device stability, which hinders their commercialization process. Thus, to understand the origin of device performance, the key is to figure out the charge-carrier dynamics of the devices. In this review, the charge-carrier dynamics of perovskites are discussed, including radiative and non-radiative recombination, together with the various passivation strategies. Second, we focus on the interfacial carrier dynamics and its influence on device performance. Various strategies to improve the injection balance have been implemented to address the inherent challenges associated with PeLEDs. Last but not least, the characterization techniques of PeLEDs are provided to study the carrier dynamics of PeLEDs.

中文翻译：

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钙钛矿发光二极管中的载流子动力学和调节策略：从材料到器件

近年来，钙钛矿发光二极管（PeLEDs）发展迅速，最高外量子效率超过20%。它们的不平衡载流子注入和缺陷辅助的非辐射复合导致钙钛矿晶体结构的破坏和器件稳定性差，这阻碍了它们的商业化进程。因此，要了解器件性能的起源，关键是弄清楚器件的载流子动力学。在这篇综述中，讨论了钙钛矿的载流子动力学，包括辐射和非辐射复合，以及各种钝化策略。其次，我们关注界面载体动力学及其对器件性能的影响。已经实施了各种改善注入平衡的策略来解决与 PeLED 相关的固有挑战。最后但同样重要的是，提供了 PeLED 的表征技术来研究 PeLED 的载流子动力学。