Solid-state electrical conducting materials can be roughly categorized as superconductors, conductors, and semiconductors, depending on their conducting carriers, resistance, and band structures. This research reports the discovery of super-semiconductors, whose resistivity is 3–10 orders of magnitude lower than conventional semiconductors at room temperature. In addition, there is a transition from a metal state to a super-semiconducting state at near room temperatures, which is accompanied by an increase in hole carrier density and the mobility increase in electrons. For the first time, a hole-dominated carrier metal is observed in nanostructured bimetallic arrays near room temperature, and no other special conditions are required. Such a behavior is due to the generation of hot electrons and holes induced by metal plasmon resonance in the infrared range in the nanostructured bimetallic arrays. Our research empowers metals with semiconductor features and paves the way to realize ultra-low-power metal-based semiconductor devices.

中文翻译：

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室温下纳米结构双金属阵列中等离子体诱导的超半导体

固态导电材料可根据其导电载流子、电阻和能带结构大致分为超导体、导体和半导体。这项研究报告了超半导体的发现，其电阻率在室温下比传统半导体低 3-10 个数量级。此外，在接近室温的温度下，存在从金属态到超半导体态的转变，伴随着空穴载流子密度的增加和电子迁移率的增加。首次在室温附近的纳米结构双金属阵列中观察到空穴主导的载流子金属，并且不需要其他特殊条件。这种行为是由于纳米结构双金属阵列中红外范围内的金属等离子体共振引起的热电子和空穴的产生。我们的研究赋予金属以半导体特性，并为实现超低功耗金属基半导体器件铺平了道路。