Memristive devices and systems have emerged as powerful technologies to fuel neuromorphic chips. However, the traditional two-terminal memristor still suffers from nonideal device characteristics, raising challenges for its further application in versatile biomimetic emulation for neuromorphic computing owing to insufficient control of filament forming for filamentary-type cells and a transport barrier for interfacial switching cells. Here, we propose three-terminal memristors with a top-gate field-effect geometry by employing a ferroelectric material, poly(vinylidene fluoride–trifluoroethylene), as the dielectric layer. This approach can finely modulate ion transport and contact barrier at the switching interface in non-filamentary perovskite memristors, thus, creating two distinct operation modes (volatile and nonvolatile). Additionally, perovskite memristors show desirable resistive switching performance, including forming-free operation, high yield of 88.9%, cycle-to-cycle variation of 7.8%, and low operating current of sub-100 nA. The dual-mode memristor is capable of emulating biological nociception in both active (perceiving pain) and blocked states (suppressing pain signaling).

中文翻译：

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双模非丝状忆阻器的铁电耦合

忆阻设备和系统已成为为神经形态芯片提供燃料的强大技术。然而，传统的两端忆阻器仍然存在不理想的器件特性，由于对丝状细胞的丝状形成控制不足和界面切换细胞的传输障碍，对其进一步应用于神经形态计算的多功能仿生仿真提出了挑战。在这里，我们通过使用铁电材料聚（偏二氟乙烯-三氟乙烯）作为介电层，提出了具有顶栅场效应几何结构的三端忆阻器。这种方法可以在非丝状钙钛矿忆阻器的切换界面处精细调节离子传输和接触势垒，从而创建两种不同的操作模式（易失性和非易失性）。此外，钙钛矿忆阻器显示出理想的电阻开关性能，包括无成型操作、88.9% 的高产率、7.8% 的周期间变化以及低于 100 nA 的低工作电流。双模式忆阻器能够在活动（感知疼痛）和阻塞状态（抑制疼痛信号）下模拟生物伤害感受。