In this research, the effect of different concentrations of Zn doping on antimony selenide (Sb₂Se₃) nanostructured films is investigated using electrodeposition method to study the properties of optoelectronics. XRD patterns confirmed the formation of polycrystalline orthorhombic Sb₂Se₃ films and FESEM images confirmed the formation of spherical particles at the nanoscale. Studying optical properties showed the band gap energy of less than 2.00 eV and investigating the electrical properties represented an increase in the density of electrical carriers in the films of Sb₂Se₃ with adding Zn concentrations. Photodetector parameters were calculated by photocurrent characterization and with alternating xenon light (on and off). It was found that sensitivity from 316.66 % to 4017.64 %, gain from 218.36 to 3924.30, responsivity from 0.0095 to 0.1708 mA/W, and specific detectivity from 1.02 × 10⁺⁹ to 1.54 × 10⁺⁹ Jones of the undoped sample reached its maximum possible value with increasing doping in the sample with maximum Zn concentration.

本研究采用电沉积法研究了不同浓度的Zn掺杂对硒化锑（Sb ₂ Se ₃）纳米结构薄膜的影响，以研究光电性能。XRD 图案证实了多晶斜方Sb ₂ Se ₃薄膜的形成，FESEM 图像证实了纳米级球形颗粒的形成。研究光学性质表明带隙能量小于 2.00 eV，研究电学性质表明 Sb ₂ Se _{3薄膜中的电载流子密度增加}加入 Zn 浓度。通过光电流表征和交替氙灯（开和关）计算光电探测器参数。发现未掺杂样品的灵敏度从 316.66% 到 4017.64%，增益从 218.36 到 3924.30，响应度从 0.0095 到 0.1708 mA/W，比检测率从 1.02 × 10 ⁺⁹到 1.54 × 10 ⁺⁹ Jones 达到最大值Zn 浓度最大的样品中增加掺杂的可能值。