Abstract

The characteristics of the gas phase and the kinetics of reactive-ion etching of silicon in a 50% C₆F₁₂O + 50% Ar plasma are studied. The study scheme includes plasma diagnostics using Langmuir probes and optical emission spectroscopy, as well as the measurement of etching rates with varying input power (200–600 W) and gas pressure (4–12 mTorr). It is shown that (a) the nature of the change in the parameters of the electron and ion components of the plasma generally corresponds to the regularities known for other fluorocarbon gases; and (b) the kinetics of the formation of fluorine atoms is significantly affected by bulk processes of the form CF_x + O → COF_x–1 + F. It is established that the change in the silicon etching rate is determined by the kinetics of the heterogeneous reaction Si + xF → SiF_x flowing in the mode of limitation by the flow of fluorine atoms. It is assumed that the effective probability of this reaction under constant temperature conditions is determined by the processes of competitive adsorption of oxygen atoms and/or surface oxidation.

中文翻译：

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C6F12O + Ar 混合物中硅的反应离子蚀刻的等离子体参数和动力学

摘要

_{研究了硅在50% C 6} F ₁₂ O + 50% Ar等离子体中的气相特征和反应离子刻蚀动力学。该研究方案包括使用朗缪尔探针和光学发射光谱进行等离子体诊断，以及测量不同输入功率 (200–600 W) 和气压 (4–12 mTorr) 的蚀刻速率。表明 (a) 等离子体的电子和离子成分参数变化的性质通常对应于其他碳氟化合物气体的已知规律；(b) 氟原子形成的动力学受到 CF _x + O → COF _{x –1形式的本体过程的显着影响}+ F. 确定硅蚀刻速率的变化是由多相反应的动力学决定的，Si + x F → SiF _x以氟原子的流动限制模式流动。假设在恒温条件下该反应的有效概率取决于氧原子的竞争吸附和/或表面氧化过程。