Abstract

In the development of promising ULIS scaling technologies, one of the key roles is played by porous dielectrics with a low permittivity used to isolate interconnects in a metallization system. Condensation of gaseous products in the pores of such films makes it possible to solve the most important problem that prevents the integration of such films, to carry out low-damage plasma etching. However, methods for studying porosity are also based on the study of the adsorption isotherm during condensation in film pores. Therefore, the study of adsorption in pores is one of the most important practical problems arising in the creation of dielectrics with a low permittivity and the study of low-damaging methods for their structuring. The method of ellipsometric porosimetry is an easy-to-implement and accurate approach for obtaining an adsorption isotherm; however, its further analysis and determination of the pore size distribution are reduced to solving an integral equation and is an ill-posed problem. In this paper, we propose to apply Tikhonov’s regularization method to solve it. The method is verified on model data and used to study a low-k dielectric sample with an initial thickness of 202 nm and a permittivity of 2.3 based on organosilicate glass.

中文翻译：

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Tikhonov 正则化方法在低 K 电介质椭圆孔隙率问题中的应用

摘要

在开发有前景的 ULIS 缩放技术中，关键作用之一是具有低介电常数的多孔电介质用于隔离金属化系统中的互连。气体产物在这种薄膜的孔隙中的冷凝使得有可能解决阻碍这种薄膜结合的最重要的问题，以进行低损伤的等离子体蚀刻。然而，研究孔隙率的方法也是基于对膜孔冷凝过程中吸附等温线的研究。因此，研究孔隙中的吸附是在低介电常数电介质的创建和低损伤构造方法的研究中出现的最重要的实际问题之一。椭圆孔率法是一种易于实施且准确的获得吸附等温线的方法；然而，它对孔径分布的进一步分析和确定被简化为求解一个积分方程，是一个不适定问题。在本文中，我们建议应用 Tikhonov 的正则化方法来解决它。该方法在模型数据上进行了验证，并用于研究基于有机硅酸盐玻璃的初始厚度为 202 nm、介电常数为 2.3 的低 k 介电样品。