Sputtered Electrolyte-Gated Transistor with Modulated Metaplasticity Behaviors,Advanced Electronic Materials

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Sputtered Electrolyte-Gated Transistor with Modulated Metaplasticity Behaviors
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2022-07-08 , DOI: 10.1002/aelm.202200463
Yang Ming Fu ₁ , Hu Li ₂ , Long Huang ₁ , Tianye Wei ₁ , Faricha Hidayati ₁ , Aimin Song _{1,

2}

Affiliation

Electrolyte-gated transistors have been proposed as promising candidates for neuromorphic applications. Synaptic plasticity behaviors and most recently synaptic metaplasticity or plasticity of plasticity behaviors have been mimicked on electrolyte-gated transistors. In this work, indium-gallium-zinc-oxide thin-film transistors gated with sputtered SiO₂ electrolytes are fabricated. Both spiking-width-dependent and spiking-height-dependent metaplasticity behaviors are successfully mimicked. The effects are modulated by the drain voltage bias. A physical model based on the electric-double-layer coupling, the RC circuit theory, and the stretched-exponential diffusion is proposed for the metaplasticity behaviors. The experiment data have been well fitted by the proposed model. Meanwhile, the Bienenstock, Cooper, and Munro learning rule, which describes the threshold-tunable, spiking-rate-dependent plasticity behaviors, is also successfully emulated, providing insight into the synaptic metaplasticity behaviors in electrolyte-gated synaptic transistors.

中文翻译：

具有调制变塑性行为的溅射电解质门控晶体管

电解质门控晶体管已被提议作为神经形态应用的有希望的候选者。突触可塑性行为和最近的突触元可塑性或可塑性行为的可塑性已在电解质门控晶体管上进行了模仿。_{在这项工作中，采用溅射 SiO 2}门控的铟镓锌氧化物薄膜晶体管制造电解质。尖峰宽度依赖和尖峰高度依赖的变塑性行为都被成功地模仿了。该效应由漏极电压偏置调制。提出了基于双电层耦合、RC电路理论和拉伸指数扩散的超塑性行为物理模型。所提出的模型已经很好地拟合了实验数据。同时，Bienenstock、Cooper 和 Munro 学习规则（描述阈值可调、尖峰速率依赖的可塑性行为）也被成功模拟，提供了对电解质门控突触晶体管中突触可塑性行为的深入了解。

更新日期：2022-07-08

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